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ED 2009-11-29
15:30		 Osaka Osaka Science & Technology Center Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations
Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163		 To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] ED2009-163
pp.19-23
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