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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2007-06-15
16:15		 Toyama Toyama Univ. MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38		 InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organ... [more] ED2007-38
pp.39-43
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