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Committee
Date Time
Place
Paper Title / Authors
Abstract
Paper #
ED
,
SDM
2006-01-26
15:30
Hokkaido
Hokkaido Univ.
[Invited Talk] Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature -- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi
,
Yukinori Ono
,
Akira Fujiwara
,
Hiroshi Inokawa
(
NTT
),
Yasuo Takahashi
(
Hokkaido Univ.
)
A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detecte...
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ED2005-228
SDM2005-240
pp.23-28
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