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R
,
ED
,
SDM
2005-11-25
15:55
Osaka
Central Electric Club
Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs
Seiya Kasai
,
Junji Kotani
,
Hideki Hasegawa
,
Tamotsu Hashizume
(
Hokkaido Univ.
)
Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in...
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R2005-46
ED2005-181
SDM2005-200
pp.47-52
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