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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-12
14:15		 Kyoto Kyoto University Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates
Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-60 CPM2016-93 LQE2016-76		 We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any ... [more] ED2016-60 CPM2016-93 LQE2016-76
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