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Date Time
Place
Paper Title / Authors
Abstract
Paper #
ED
,
CPM
,
LQE
2006-10-05
15:45
Kyoto
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima
,
Masataka Higashiwaki
(
NICT
),
Jun Suda
,
Tsunenobu Kimoto
(
Kyoto Univ.
),
Takashi Mimura
(
NICT/Fujitsu Lab.
),
Toshiaki Matsui
(
NICT
)
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva...
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ED2006-158
CPM2006-95
LQE2006-62
pp.35-38
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