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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2008-07-09
13:20		 Hokkaido Kaderu２・７ [Invited Talk] Guidelines for the Threshold Voltage Control of Metal/HfSiON system
Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba) ED2008-43 SDM2008-62		  [more] ED2008-43 SDM2008-62
pp.21-24
ICD, SDM 2007-08-24
10:20		 Hokkaido Kitami Institute of Technology [Special Invited Talk] Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond
Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87		 In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characte... [more] SDM2007-159 ICD2007-87
pp.101-106
SDM 2007-06-08
12:45		 Hiroshima Hiroshima Univ. ( Faculty Club) Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics.
Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba) SDM2007-45		 The effective work functions (Φeff ) of various metals on LaAlO3 were systematically investigated. Contrary to the case ... [more] SDM2007-45
pp.75-80
SDM 2006-06-22
15:30		 Hiroshima Faculty Club, Hiroshima Univ. Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates
Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,) 		In this paper, we show the results of our recent work on work function control in metal gate, which is one of the most d... [more] SDM2006-64
pp.125-130
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