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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 33  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
16:20
Shizuoka   Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation
Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-21 CPM2023-63 LQE2023-61
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] ED2023-21 CPM2023-63 LQE2023-61
pp.36-39
LQE, ED, CPM 2023-11-30
16:45
Shizuoka   Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures
Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] ED2023-22 CPM2023-64 LQE2023-62
pp.40-43
CPM, ED, LQE 2022-11-25
13:00
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] ED2022-43 CPM2022-68 LQE2022-76
pp.85-88
LQE, CPM, ED 2020-11-26
11:55
Online Online 265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods
Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-6 CPM2020-27 LQE2020-57
 [more] ED2020-6 CPM2020-27 LQE2020-57
pp.21-24
LQE, CPM, ED 2020-11-27
15:40
Online Online High-efficiency light emissions by plasmonic nano-cavities and applications to quantum devices
Koichi Okamoto, Seiya Kaito, Kohei Shimanoe, Fumiya Murao, Tetsuya Matsuyama, Kenji Wada (Osaka Pref. Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-25 CPM2020-46 LQE2020-76
Resonance with excitons in light-emitting materials and plasmon nano-cavities brings enhancements of the spontaneous emi... [more] ED2020-25 CPM2020-46 LQE2020-76
pp.95-98
CPM, LQE, ED 2019-11-22
13:05
Shizuoka Shizuoka Univ. (Hamamatsu) Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes
Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) ED2019-54 CPM2019-73 LQE2019-97
Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates wi... [more] ED2019-54 CPM2019-73 LQE2019-97
pp.89-92
ED, LQE, CPM 2018-11-29
13:00
Aichi Nagoya Inst. tech. Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells
Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.) ED2018-32 CPM2018-66 LQE2018-86
 [more] ED2018-32 CPM2018-66 LQE2018-86
pp.1-4
LQE 2017-12-15
10:35
Tokyo   [Encouragement Talk] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] LQE2017-86
pp.5-8
LQE, CPM, ED 2017-11-30
14:50
Aichi Nagoya Inst. tech. Optical properties of AlGaN quantum wires formed on AlN with macrostep surface
Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2017-52 CPM2017-95 LQE2017-65
Extensive studies on AlGaN/Al(Ga)N quantum wells recently achieved the commercialization of deep-ultraviolet LEDs. Howev... [more] ED2017-52 CPM2017-95 LQE2017-65
pp.15-18
CPM, LQE, ED 2016-12-13
10:05
Kyoto Kyoto University Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] ED2016-70 CPM2016-103 LQE2016-86
pp.67-70
CPM, LQE, ED 2016-12-13
10:30
Kyoto Kyoto University Crystal growth of bulk AlN by a clean process
Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-71 CPM2016-104 LQE2016-87
We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and cle... [more] ED2016-71 CPM2016-104 LQE2016-87
pp.71-74
SAT, WBS
(Joint)
2016-05-19
15:50
Aichi Nagoya Institute of Technology [Special Talk] Onboard antenna pointing control for geostationary multibeam satellites
Yoichi Kawakami (HIU) SAT2016-6
Next-generation communication satellites with 30m class deployable onboard antennas are studied to complement mobile com... [more] SAT2016-6
pp.31-36
ED, LQE, CPM 2015-11-26
16:30
Osaka Osaka City University Media Center Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers
Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it... [more] ED2015-79 CPM2015-114 LQE2015-111
pp.59-62
ED, LQE, CPM 2015-11-26
16:55
Osaka Osaka City University Media Center Plasmonics with Aluminum applied to emission enhancements
Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-80 CPM2015-115 LQE2015-112
The use of “Plasmonics” is one very promising method to improve the emission efficiencies of light-emitting diodes (LEDs... [more] ED2015-80 CPM2015-115 LQE2015-112
pp.63-68
LQE, ED, CPM 2014-11-27
11:00
Osaka   Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] ED2014-74 CPM2014-131 LQE2014-102
pp.5-8
CPM, LQE, ED 2013-11-28
16:40
Osaka   A novel method for crystallizations of aluminum nitride
PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2013-75 CPM2013-134 LQE2013-110
In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been sy... [more] ED2013-75 CPM2013-134 LQE2013-110
pp.51-55
ED, LQE, CPM 2012-11-30
11:25
Osaka Osaka City University Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] ED2012-81 CPM2012-138 LQE2012-109
pp.71-74
LQE, ED, CPM 2011-11-18
09:30
Kyoto Katsura Hall,Kyoto Univ. Strain-Induced Effects on the Electronic Band Structure of AlN
Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2011-88 CPM2011-137 LQE2011-111
The top of the valence band structure in Wurtzite crystals is split to the irreducible representation of Γ1 and Γ5
by t... [more]
ED2011-88 CPM2011-137 LQE2011-111
pp.77-80
LQE, ED, CPM 2011-11-18
11:10
Kyoto Katsura Hall,Kyoto Univ. Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs
Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ED2011-92 CPM2011-141 LQE2011-115
 [more] ED2011-92 CPM2011-141 LQE2011-115
pp.99-102
CPM, LQE, ED 2010-11-11
14:55
Osaka   Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy -- Efficiency droop mechanism assessed by SNOM --
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-149 CPM2010-115 LQE2010-105
The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been perf... [more] ED2010-149 CPM2010-115 LQE2010-105
pp.33-36
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