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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-02-07 14:30 |
Tokyo | [Invited Talk]
Single Crystal Al Interconnects formed on p-GaN and their Application to GaN FET Takeshi Harada, Koji Utaka, Yusuke Kand, Katsuhiko Onishi, Keiichi Matsunaga, Masahiro Hikita, Yasuhiro Uemoto (Panasonic)  SDM2018-95 |
[more] | SDM2018-95 pp.19-22 |
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| MW, ED | 2017-01-26 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] | ED2016-96 MW2016-172 pp.1-5 |
| MW, ED | 2009-01-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | GaN-based Natural Super Junction Diodes Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167 |
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] | ED2008-202 MW2008-167 pp.23-27 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
AlGaN/GaN Power Transistors for power switching applications Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) |
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more] | |
| MW, ED | 2007-01-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] | ED2006-235 MW2006-188 pp.193-197 |
| ED, SDM, R | 2006-11-24 16:30 |
Osaka | Central Electric Club | Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) |
[more] | R2006-38 ED2006-183 SDM2006-201 pp.39-42 |
| ED, CPM, LQE | 2006-10-05 14:40 |
Kyoto | GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] | ED2006-156 CPM2006-93 LQE2006-60 pp.23-27 |
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| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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| MW, ED | 2005-01-18 09:20 |
Tokyo | - Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) |
In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] | ED2004-212 MW2004-219 pp.1-5 |
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| MW, ED | 2005-01-18 10:10 |
Tokyo | - Tomohiro Murata, Masahiro Hikita, Yutaka Hirose, Kaoru Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
[more] | ED2004-214 MW2004-221 pp.13-17 |
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