| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OPE, LQE, OCS | 2019-11-11 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg (Tokyo) | [Special Invited Talk]
An Ultralow-Crosstalk WDM Demultiplexer with Automatic Fabrication-Error Correction Enabling High Yields and Temperature Insensitivity on Low-End Si Platforms Tomoyuki Akiyama (PETRA), Shoichiro Oda (Fujitsu), Seok-Hwan Jeong, Yasuhiro Nakasha, Akinori Hayakawa, Yu Tanaka (PETRA), Takeshi Hoshida (Fujitsu)  OCS2019-57 OPE2019-95 LQE2019-73 |
(Advance abstract in Japanese is available) [more] | OCS2019-57 OPE2019-95 LQE2019-73 pp.27-32 |
| CPM, ED, EID, SDM, ICD, MRIS, QIT, SCE, OME, EMD (Joint) [detail] |
2018-03-08 13:50 |
Shizuoka | [Invited Talk]
Present status and prospect of III-V RF devices Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.) EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 |
III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compa... [more] | EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 pp.9-10 |
|
| MW, ED | 2017-01-27 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] | ED2016-102 MW2016-178 pp.29-33 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| ED | 2016-01-20 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118 |
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] | ED2015-118 pp.37-41 |
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| ED | 2015-12-21 14:35 |
Miyagi | RIEC, Tohoku Univ | Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-94 |
We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to d... [more] | ED2015-94 pp.19-23 |
| MW, ED | 2015-01-16 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Wideband Common-gate Amplifiers with current-reuse-topology MMIC and its application Masaru Sato, Shoichi Shiba, Yoichi Kawano, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2014-130 MW2014-194 |
[more] | ED2014-130 MW2014-194 pp.77-81 |
| ED | 2014-12-23 09:40 |
Miyagi | Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.) ED2014-108 |
(To be available after the conference date) [more] | ED2014-108 pp.57-61 |
|
| ED | 2014-08-01 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53 |
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] | ED2014-53 pp.1-6 |
| ED | 2013-12-16 13:15 |
Miyagi | Research Institute of Electrical Communication Tohoku University | [Invited Talk]
Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies Masaru Sato, Yoichi Kawano, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-91 |
Recent advances in the process technology of electronics devices have opened the possibility of achieving submillimeter-... [more] | ED2013-91 pp.7-11 |
| ED | 2013-12-16 14:20 |
Miyagi | Research Institute of Electrical Communication Tohoku University | An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93 |
A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at ... [more] | ED2013-93 pp.19-23 |
| ED | 2012-12-17 13:50 |
Miyagi | Tohoku University | F-Band Bidirectional Amplifier Using 75-nm InP HEMTs Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2012-95 |
We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-ran... [more] | ED2012-95 pp.11-15 |
| ED | 2012-12-18 11:40 |
Miyagi | Tohoku University | High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2012-106 |
Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications mo... [more] | ED2012-106 pp.75-76 |
| ED | 2011-12-14 14:30 |
Miyagi | Tohoku University | Low Noise Amplifier and Detector for Millimeter-wave Sensors Masaru Sato, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2011-103 |
[more] | ED2011-103 pp.19-24 |
| ED | 2010-12-17 09:30 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | [Invited Talk]
Millimeter-wave Impulse Radio system using InP-based HEMT MMIC Naoki Hara, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi (Fujitsu/Fujitsu Labs.) ED2010-165 |
Both transmitter and receiver modules based on simple impulse radio (IR) based architecture using InP-based HEMTs that w... [more] | ED2010-165 pp.41-45 |
| CPM, LQE, ED | 2010-11-11 16:50 |
Osaka | High-Power GaN-HEMT for Millimeter-Wave Amplifier Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109 |
[more] | ED2010-153 CPM2010-119 LQE2010-109 pp.51-54 |
|
| ED, MW | 2010-01-15 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2009-190 MW2009-173 |
[more] | ED2009-190 MW2009-173 pp.87-92 |
| MW | 2009-11-19 16:00 |
Kagoshima | Tanegashima | [Special Talk]
Report on 2009 IEEE MTT-S International Microwave Symposium Hiroshi Okazaki (NTT DOCOMO), Kenjiro Nishikawa (NTT Corp.), Yasunori Suzuki (NTT DOCOMO), Kensuke Okubo (Okayama Pref. Univ.), Tetsuya Ueda (Kyoto Inst. of Tech.), Akimichi Hirota (Mitsubishi Electric Corp.), Hirokazu Kamoda (NHK), Yasuhiro Nakasha (FUJITSU LABORATORIES LTD.) MW2009-134 |
Report on 2009 IEEE MTT-S International Microwave Symposium held in Boston, MA, USA, is presented. [more] | MW2009-134 pp.35-42 |
| SDM, ED | 2009-06-24 14:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) ED2009-50 SDM2009-45 |
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A... [more] | ED2009-50 SDM2009-45 pp.1-4 |
[Return to Top Page]