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SDM 2012-11-15
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] High Performance SiC Power Devices and Modules -- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) SDM2012-100		 Ultra-small power modules with high temperature operation are realized by using low-Ron SiC trench MOSFET. [more] SDM2012-100
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