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 Results 41 - 46 of 46 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2008-10-30
13:25		 Niigata Niigata Univ. Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD
Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76		 Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] CPM2008-76
pp.7-12
SDM, ED 2008-07-10
10:40		 Hokkaido Kaderu２・７ Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa (Tohoku Univ.) ED2008-59 SDM2008-78		 In this study, I have numerically investigated the temperature distribution of n-type Si Nano Wire MOS transistor (NW-MO... [more] ED2008-59 SDM2008-78
pp.101-105
SDM, ED 2008-07-10
10:55		 Hokkaido Kaderu２・７ Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-60 SDM2008-79		 In this paper, the device performances of sub-10nm Vertical MOSFETs are investigated. One of the drawbacks of convention... [more] ED2008-60 SDM2008-79
pp.107-111
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop
Tetsuo Endoh, Masashi Kamiyanagi (Tohoku Univ.) ED2008-82 SDM2008-101		 In this paper, I propose the novel Dynamic Feedback (DF-) MCML technique for high-speed and high-gain MCML type D-Flip F... [more] ED2008-82 SDM2008-101
pp.227-231
SDM, ED 2008-07-11
11:05		 Hokkaido Kaderu２・７ Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations
Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-83 SDM2008-102		 We propose Current Controlled MOS Current Mode Logic (CC-MCML) and have succeeded in fabricating CC-MCML with 180nm CMOS... [more] ED2008-83 SDM2008-102
pp.233-238
CPM 2007-11-17
09:00		 Niigata Nagaoka University of Technology Growth of GaN by hot-mesh CVD -- Effect of Ru coated W mesh --
Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115		  [more] CPM2007-115
pp.55-58
 Results 41 - 46 of 46 [Previous]  /   
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