Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2010-07-02 12:45 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96 |
In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by meas... [more] |
ED2010-95 SDM2010-96 pp.195-198 |
ED, SDM |
2010-07-02 15:05 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Impact of Floating Body type DRAM with the Vertical MOSFET Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST) ED2010-98 SDM2010-99 |
Several kinds of capacitor-less DRAM cells based on planar SOI-MOSFET technology have been proposed and researched to ov... [more] |
ED2010-98 SDM2010-99 pp.211-216 |
ED, SDM |
2010-07-02 16:05 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure Moon-Sik Seo (Tohoku Univ.), Tetsuo Endoh (Tohoku Univ./JST) ED2010-101 SDM2010-102 |
Recently, the 3-dimensional vertical Floating Gate (FG) NAND flash memory cell arrays with the extended sidewall control... [more] |
ED2010-101 SDM2010-102 pp.225-230 |
ED, SDM |
2010-07-02 11:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.) ED2010-109 SDM2010-110 |
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical ... [more] |
ED2010-109 SDM2010-110 pp.257-262 |
ED, SDM |
2010-07-02 11:50 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) ED2010-110 SDM2010-111 |
We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC... [more] |
ED2010-110 SDM2010-111 pp.263-267 |
ED, SDM |
2010-07-02 12:50 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na (Tohoku Univ.) ED2010-114 SDM2010-115 |
In this paper, a new 2 step program method is proposed to realize high speed and low power program operation for novel n... [more] |
ED2010-114 SDM2010-115 pp.283-288 |
ED, SDM |
2010-07-02 15:45 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) ED2010-120 SDM2010-121 |
In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pil... [more] |
ED2010-120 SDM2010-121 pp.309-313 |
ED, SDM |
2010-07-02 16:15 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] |
ED2010-122 SDM2010-123 pp.319-324 |
ICD |
2010-04-22 15:20 |
Kanagawa |
Shonan Institute of Tech. |
Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array Daisuke Suzuki, Masanori Natsui, Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa (ARL, Hitachi, Ltd.), Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2010-9 |
This paper presents a nonvolatile LUT (Lookup-Table) circuit in FPGA (Field-Programmable Gate Array) using a MTJ (Magnet... [more] |
ICD2010-9 pp.47-52 |
CPM |
2009-08-10 16:05 |
Aomori |
Hirosaki Univ. |
Characterization of Diamond-Like Carbon Thin Films Prepared by Radio-Frequency Pasma-Ehanced CVD Using Organosilanes Soushi Miura, Hideki Nakazawa, Keita Nishizaki (Hirosaki Univ.), Maki Suemitsu (RIEC Tohoku Univ.), Kanji Yasui (Nagaoka Univ. of Tech.), Takashi Ito, Tetsuo Endoh (CIR Tohoku Univ.), Yuzuru Narita (Yamagata Univ.) CPM2009-36 |
To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si-incorporated DLC (Si-DLC) fil... [more] |
CPM2009-36 pp.13-18 |
CPM |
2009-08-11 11:40 |
Aomori |
Hirosaki Univ. |
Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies. Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45 |
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] |
CPM2009-45 pp.61-66 |
ICD, SDM |
2009-07-17 11:15 |
Tokyo |
Tokyo Institute of Technology |
[Invited Talk]
Impact of Silicon Technology in "Beyond CMOS" World Tetsuo Endoh, Takahiro Hanyu (Tohoku Univ.) SDM2009-111 ICD2009-27 |
In recent years, the Beyond CMOS technology is studied in addition to More Moore technology and More than Moore technolo... [more] |
SDM2009-111 ICD2009-27 pp.73-78 |
SDM, ED |
2009-06-24 15:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47 |
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] |
ED2009-52 SDM2009-47 pp.9-12 |
SDM, ED |
2009-06-24 15:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] |
ED2009-53 SDM2009-48 pp.13-16 |
SDM, ED |
2009-06-24 16:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.) ED2009-55 SDM2009-50 |
A Current Controlled (CC-) MOS Current Mode Logic (MCML) circuit based on auto-detection of threshold voltage (Vth) fluc... [more] |
ED2009-55 SDM2009-50 pp.21-24 |
SDM, ED |
2009-06-24 16:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Design of 30nm FinFET with Halo Structure Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST) ED2009-64 SDM2009-59 |
Design of 30nm FinFETs with halo structure for suppressing the threshold voltage roll-off and improving the subthreshold... [more] |
ED2009-64 SDM2009-59 pp.63-66 |
SDM, ED |
2009-06-25 12:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84 |
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] |
ED2009-89 SDM2009-84 pp.169-172 |
SDM, ED |
2009-06-25 13:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST) ED2009-90 SDM2009-85 |
The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the fi... [more] |
ED2009-90 SDM2009-85 pp.173-176 |
SDM, ED |
2009-06-26 11:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88 |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] |
ED2009-93 SDM2009-88 pp.185-188 |
SDM, ED |
2009-06-26 09:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
Future High Density Memory with Vertical Structured Device Technology Tetsuo Endoh (Tohoku Univ.) ED2009-95 SDM2009-90 |
For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor mem... [more] |
ED2009-95 SDM2009-90 pp.193-196 |