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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 46 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-07-02
12:45
Tokyo Tokyo Inst. of Tech. Ookayama Campus Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96
In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by meas... [more] ED2010-95 SDM2010-96
pp.195-198
ED, SDM 2010-07-02
15:05
Tokyo Tokyo Inst. of Tech. Ookayama Campus Impact of Floating Body type DRAM with the Vertical MOSFET
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST) ED2010-98 SDM2010-99
Several kinds of capacitor-less DRAM cells based on planar SOI-MOSFET technology have been proposed and researched to ov... [more] ED2010-98 SDM2010-99
pp.211-216
ED, SDM 2010-07-02
16:05
Tokyo Tokyo Inst. of Tech. Ookayama Campus The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure
Moon-Sik Seo (Tohoku Univ.), Tetsuo Endoh (Tohoku Univ./JST) ED2010-101 SDM2010-102
Recently, the 3-dimensional vertical Floating Gate (FG) NAND flash memory cell arrays with the extended sidewall control... [more] ED2010-101 SDM2010-102
pp.225-230
ED, SDM 2010-07-02
11:35
Tokyo Tokyo Inst. of Tech. Ookayama Campus The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation
Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.) ED2010-109 SDM2010-110
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical ... [more] ED2010-109 SDM2010-110
pp.257-262
ED, SDM 2010-07-02
11:50
Tokyo Tokyo Inst. of Tech. Ookayama Campus Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) ED2010-110 SDM2010-111
We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC... [more] ED2010-110 SDM2010-111
pp.263-267
ED, SDM 2010-07-02
12:50
Tokyo Tokyo Inst. of Tech. Ookayama Campus Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells
Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na (Tohoku Univ.) ED2010-114 SDM2010-115
In this paper, a new 2 step program method is proposed to realize high speed and low power program operation for novel n... [more] ED2010-114 SDM2010-115
pp.283-288
ED, SDM 2010-07-02
15:45
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) ED2010-120 SDM2010-121
In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pil... [more] ED2010-120 SDM2010-121
pp.309-313
ED, SDM 2010-07-02
16:15
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] ED2010-122 SDM2010-123
pp.319-324
ICD 2010-04-22
15:20
Kanagawa Shonan Institute of Tech. Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array
Daisuke Suzuki, Masanori Natsui, Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa (ARL, Hitachi, Ltd.), Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2010-9
This paper presents a nonvolatile LUT (Lookup-Table) circuit in FPGA (Field-Programmable Gate Array) using a MTJ (Magnet... [more] ICD2010-9
pp.47-52
CPM 2009-08-10
16:05
Aomori Hirosaki Univ. Characterization of Diamond-Like Carbon Thin Films Prepared by Radio-Frequency Pasma-Ehanced CVD Using Organosilanes
Soushi Miura, Hideki Nakazawa, Keita Nishizaki (Hirosaki Univ.), Maki Suemitsu (RIEC Tohoku Univ.), Kanji Yasui (Nagaoka Univ. of Tech.), Takashi Ito, Tetsuo Endoh (CIR Tohoku Univ.), Yuzuru Narita (Yamagata Univ.) CPM2009-36
To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si-incorporated DLC (Si-DLC) fil... [more] CPM2009-36
pp.13-18
CPM 2009-08-11
11:40
Aomori Hirosaki Univ. Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies.
Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] CPM2009-45
pp.61-66
ICD, SDM 2009-07-17
11:15
Tokyo Tokyo Institute of Technology [Invited Talk] Impact of Silicon Technology in "Beyond CMOS" World
Tetsuo Endoh, Takahiro Hanyu (Tohoku Univ.) SDM2009-111 ICD2009-27
In recent years, the Beyond CMOS technology is studied in addition to More Moore technology and More than Moore technolo... [more] SDM2009-111 ICD2009-27
pp.73-78
SDM, ED 2009-06-24
15:00
Overseas Haeundae Grand Hotel, Busan, Korea Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] ED2009-52 SDM2009-47
pp.9-12
SDM, ED 2009-06-24
15:15
Overseas Haeundae Grand Hotel, Busan, Korea Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] ED2009-53 SDM2009-48
pp.13-16
SDM, ED 2009-06-24
16:15
Overseas Haeundae Grand Hotel, Busan, Korea Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.) ED2009-55 SDM2009-50
A Current Controlled (CC-) MOS Current Mode Logic (MCML) circuit based on auto-detection of threshold voltage (Vth) fluc... [more] ED2009-55 SDM2009-50
pp.21-24
SDM, ED 2009-06-24
16:30
Overseas Haeundae Grand Hotel, Busan, Korea Design of 30nm FinFET with Halo Structure
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST) ED2009-64 SDM2009-59
Design of 30nm FinFETs with halo structure for suppressing the threshold voltage roll-off and improving the subthreshold... [more] ED2009-64 SDM2009-59
pp.63-66
SDM, ED 2009-06-25
12:45
Overseas Haeundae Grand Hotel, Busan, Korea Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] ED2009-89 SDM2009-84
pp.169-172
SDM, ED 2009-06-25
13:00
Overseas Haeundae Grand Hotel, Busan, Korea Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST) ED2009-90 SDM2009-85
The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the fi... [more] ED2009-90 SDM2009-85
pp.173-176
SDM, ED 2009-06-26
11:45
Overseas Haeundae Grand Hotel, Busan, Korea Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] ED2009-93 SDM2009-88
pp.185-188
SDM, ED 2009-06-26
09:30
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Future High Density Memory with Vertical Structured Device Technology
Tetsuo Endoh (Tohoku Univ.) ED2009-95 SDM2009-90
For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor mem... [more] ED2009-95 SDM2009-90
pp.193-196
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