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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ICD |
2012-04-23
12:30 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
[Invited Talk]
A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface
Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yuui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Jiyun Nakai (Toshiba), Teruhiko Kamei (SanDisk)  ICD2012-1 |
A 64Gb MLC NAND flash memory on 19nm CMOS technology has been developed. By adopting One-Sided All-Bit-Line architecture... [more] |
ICD2012-1
pp.1-5 |
| ICD |
2012-04-23
13:20 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
[Invited Talk]
128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate
Teruhiko Kamei, Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Masaaki Higashitani, Tuan Pham, Mitsuyuki Watanabe (SanDisk), Mitsuaki Honma, Yoshihisa Watanabe (Toshiba) ICD2012-2 |
A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capaci... [more] |
ICD2012-2
pp.7-12 |
| ICD |
2009-04-14
13:00 |
Miyagi |
Daikanso (Matsushima, Miyagi) |
[Invited Talk]
A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.) ICD2009-8 |
A 113mm2 32Gbit 3bit/cell (8-levels) NAND Flash memory using 32nm CMOS technology is developed. This 32Gbit Flash die is... [more] |
ICD2009-8
pp.39-42 |
| ICD |
2009-04-14
13:50 |
Miyagi |
Daikanso (Matsushima, Miyagi) |
A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9 |
A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more] |
ICD2009-9
pp.43-46 |
| ICD |
2005-04-14
15:45 |
Fukuoka |
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A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology
Takumi Abe, Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka (Toshiba), Teruhiko Kamei, Hiroaki Nasu (SanDisk) |
[more] |
ICD2005-10
pp.47-52 |
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