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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2012-04-28
11:50		 Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT
Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-18 OME2012-18		 After performing BLDA for phosphorus-doped Si films deposited by sputtering using Ne gas, the crystallinity of the films... [more] SDM2012-18 OME2012-18
pp.79-82
ED, SDM 2010-02-22
15:15		 Okinawa Okinawaken-Seinen-Kaikan Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory
Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198		 We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] ED2009-201 SDM2009-198
pp.29-33
SDM 2007-12-14
13:30		 Nara Nara Institute Science and Technology In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing
Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-228		 In-situ measurement technique of temperature profile in Si wafer during millisecond rapid thermal annealing has been dev... [more] SDM2007-228
pp.27-29
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