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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 41 - 56 of 56 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2007-06-25
15:05		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Electrochemical formation and sensor application of InP porous nanostructures
Taketomo Sato, Toshiyuki Fujino, Tamotsu Hashizume (Hokkaido Univ.) 		A two-step electrochemical process was developed to form high-density array of InP porous nanostructures. By the subsequ... [more]
ED 2007-06-16
10:10		 Toyama Toyama Univ. Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42		 This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution ... [more] ED2007-42
pp.61-65
SDM, ED 2007-02-02
11:25		 Hokkaido   Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2006-253 SDM2006-241
pp.73-77
MW, ED 2007-01-19
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) 		Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] ED2006-232 MW2006-185
pp.179-182
ED, SDM, R 2006-11-24
16:05		 Osaka Central Electric Club
Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] R2006-37 ED2006-182 SDM2006-200
pp.33-38
ED, CPM, LQE 2006-10-05
15:20		 Kyoto   Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) 		 [more] ED2006-157 CPM2006-94 LQE2006-61
pp.29-34
ED, CPM, SDM 2006-05-19
13:10		 Aichi VBL, Toyohashi University of Technology Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2006-36 CPM2006-23 SDM2006-36
pp.91-94
ED, SDM 2006-01-27
10:55		 Hokkaido Hokkaido Univ. Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit
Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ) 		(To be available after the conference date) [more] ED2005-235 SDM2005-247
pp.21-26
ED, MW 2006-01-19
10:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ) 		 [more] ED2005-200 MW2005-154
pp.7-12
ED, MW 2006-01-19
11:10		 Tokyo Kikai-Shinko-Kaikan Bldg. C-V characterization of GaN-based MIS structures at high temperatures
Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-201 MW2005-155
pp.13-16
R, ED, SDM 2005-11-25
15:55		 Osaka Central Electric Club Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs
Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in... [more] R2005-46 ED2005-181 SDM2005-200
pp.47-52
LQE, ED, CPM 2005-10-13
15:40		 Shiga Ritsumeikan Univ. Lateral tunneling transport in submicron gates on AlGaN/GaN HFET
Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-132 CPM2005-119 LQE2005-59
pp.67-70
LQE, ED, CPM 2005-10-13
17:20		 Shiga Ritsumeikan Univ. Formation of AlGaN/GaN nano wire network using selective RF-MBE
Takeshi Oikawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-137 CPM2005-124 LQE2005-64
pp.89-92
LQE, ED, CPM 2005-10-14
13:00		 Shiga Ritsumeikan Univ. Liquid sensor using gateless AlGaN/GaN HEMT structure
Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-147 CPM2005-134 LQE2005-74
pp.39-42
LQE, ED, CPM 2005-10-14
13:20		 Shiga Ritsumeikan Univ. Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure
Kazushi Matsuo, Takeshi Kimura, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-148 CPM2005-135 LQE2005-75
pp.43-46
MW, ED 2005-01-18
13:00		 Tokyo   -
Tamotsu Hashizume, Masamitsu Kaneko (Hokkaido Univ.) 		 [more] ED2004-218 MW2004-225
pp.37-40
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