Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2010-06-17 16:15 |
Ishikawa |
JAIST |
Understanding of C-V characteristics in AlGaN/GaN MIS structure Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST) ED2010-40 |
[more] |
ED2010-40 pp.37-40 |
ED, MW |
2010-01-14 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
AlGaN/GaN HEMT having periodic mesa-gate structure Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] |
ED2009-183 MW2009-166 pp.49-53 |
ED, MW |
2010-01-14 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-185 MW2009-168 |
[more] |
ED2009-185 MW2009-168 pp.61-64 |
ED, LQE, CPM |
2009-11-20 10:55 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Variation of surface properties in Mg-doped GaN Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST) ED2009-150 CPM2009-124 LQE2009-129 |
We have investigated chemical, electrical and optical properties of Mg-doped GaN surfaces subjected to a high-temperatur... [more] |
ED2009-150 CPM2009-124 LQE2009-129 pp.105-108 |
ED, LQE, CPM |
2009-11-20 11:45 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Surface properties and deep electronic levels of AlGaN with high Al compositions Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-152 CPM2009-126 LQE2009-131 |
[more] |
ED2009-152 CPM2009-126 LQE2009-131 pp.115-118 |
SDM, ED |
2009-06-25 11:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-74 SDM2009-69 |
[more] |
ED2009-74 SDM2009-69 pp.109-112 |
SDM, ED |
2009-06-25 11:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Formation and application of InP porous structures on p-n substrates Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71 |
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-dens... [more] |
ED2009-76 SDM2009-71 pp.117-120 |
ED |
2009-06-11 16:00 |
Tokyo |
|
Characterization of ALD-Al2O3/AlGaN/GaN interfaces Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-41 |
[more] |
ED2009-41 pp.27-30 |
ED, CPM, SDM |
2009-05-15 13:50 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Operation stability assessment of AlGaN/GaN HEMT Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2009-34 CPM2009-24 SDM2009-24 |
[more] |
ED2009-34 CPM2009-24 SDM2009-24 pp.87-90 |
ED, CPM, SDM |
2009-05-15 14:15 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Electrochemical oxidation of GaN for surface control structure Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) ED2009-35 CPM2009-25 SDM2009-25 |
[more] |
ED2009-35 CPM2009-25 SDM2009-25 pp.91-94 |
MW, ED |
2009-01-16 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188 |
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] |
ED2008-223 MW2008-188 pp.141-144 |
SDM, ED |
2008-07-10 10:00 |
Hokkaido |
Kaderu2・7 |
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network Hong-Quan Zhao (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST), Tamotsu Hashizume (Hokkaido Univ.) ED2008-66 SDM2008-85 |
2-bit arithmetic logic unit (ALU) utilizing the binary-decision diagram (BDD) logic architecture for nanoprocessor is fa... [more] |
ED2008-66 SDM2008-85 pp.139-144 |
SDM, ED |
2008-07-11 15:50 |
Hokkaido |
Kaderu2・7 |
Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.) ED2008-102 SDM2008-121 |
We investigated the electrocatalytic activity of n-type InP porous nanostructures and the feasibility of their functiona... [more] |
ED2008-102 SDM2008-121 pp.327-330 |
SDM, ED |
2008-07-11 15:05 |
Hokkaido |
Kaderu2・7 |
Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.) ED2008-106 SDM2008-125 |
A SiNx/GaN structure was prepared by ECR-CVD, and annealed at 1000 oC for 2 hours in N2 ambient. An XPS result showed th... [more] |
ED2008-106 SDM2008-125 pp.347-350 |
ED |
2008-06-13 13:50 |
Ishikawa |
Kanazawa University |
Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) ED2008-24 |
[more] |
ED2008-24 pp.11-16 |
ED, SDM |
2008-01-31 11:15 |
Hokkaido |
|
Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) ED2007-249 SDM2007-260 |
Implementation of active and sequential circuits on semiconductor-based nanowire networks with a specific topology and p... [more] |
ED2007-249 SDM2007-260 pp.63-68 |
ED, MW |
2008-01-16 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Surface passivation of GaN using electorchemical process Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138 |
The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] |
ED2007-207 MW2007-138 pp.7-10 |
SDM, R, ED |
2007-11-16 14:15 |
Osaka |
|
High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] |
R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
CPM, ED, LQE |
2007-10-11 17:35 |
Fukui |
Fukui Univ. |
UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65 |
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] |
ED2007-164 CPM2007-90 LQE2007-65 pp.43-46 |
CPM, ED, LQE |
2007-10-12 11:15 |
Fukui |
Fukui Univ. |
Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 |
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] |
ED2007-170 CPM2007-96 LQE2007-71 pp.73-76 |