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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 56 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-06-17
16:15
Ishikawa JAIST Understanding of C-V characteristics in AlGaN/GaN MIS structure
Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST) ED2010-40
 [more] ED2010-40
pp.37-40
ED, MW 2010-01-14
10:50
Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN HEMT having periodic mesa-gate structure
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] ED2009-183 MW2009-166
pp.49-53
ED, MW 2010-01-14
13:40
Tokyo Kikai-Shinko-Kaikan Bldg Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures
Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-185 MW2009-168
 [more] ED2009-185 MW2009-168
pp.61-64
ED, LQE, CPM 2009-11-20
10:55
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Variation of surface properties in Mg-doped GaN
Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST) ED2009-150 CPM2009-124 LQE2009-129
We have investigated chemical, electrical and optical properties of Mg-doped GaN surfaces subjected to a high-temperatur... [more] ED2009-150 CPM2009-124 LQE2009-129
pp.105-108
ED, LQE, CPM 2009-11-20
11:45
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Surface properties and deep electronic levels of AlGaN with high Al compositions
Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-152 CPM2009-126 LQE2009-131
 [more] ED2009-152 CPM2009-126 LQE2009-131
pp.115-118
SDM, ED 2009-06-25
11:00
Overseas Haeundae Grand Hotel, Busan, Korea Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition
Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-74 SDM2009-69
 [more] ED2009-74 SDM2009-69
pp.109-112
SDM, ED 2009-06-25
11:30
Overseas Haeundae Grand Hotel, Busan, Korea Formation and application of InP porous structures on p-n substrates
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-dens... [more] ED2009-76 SDM2009-71
pp.117-120
ED 2009-06-11
16:00
Tokyo   Characterization of ALD-Al2O3/AlGaN/GaN interfaces
Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-41
 [more] ED2009-41
pp.27-30
ED, CPM, SDM 2009-05-15
13:50
Aichi Satellite Office, Toyohashi Univ. of Technology Operation stability assessment of AlGaN/GaN HEMT
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2009-34 CPM2009-24 SDM2009-24
 [more] ED2009-34 CPM2009-24 SDM2009-24
pp.87-90
ED, CPM, SDM 2009-05-15
14:15
Aichi Satellite Office, Toyohashi Univ. of Technology Electrochemical oxidation of GaN for surface control structure
Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) ED2009-35 CPM2009-25 SDM2009-25
 [more] ED2009-35 CPM2009-25 SDM2009-25
pp.91-94
MW, ED 2009-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg Mesa-gate AlGaN/GaN HEMT having nano-width channels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] ED2008-223 MW2008-188
pp.141-144
SDM, ED 2008-07-10
10:00
Hokkaido Kaderu2・7 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network
Hong-Quan Zhao (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST), Tamotsu Hashizume (Hokkaido Univ.) ED2008-66 SDM2008-85
2-bit arithmetic logic unit (ALU) utilizing the binary-decision diagram (BDD) logic architecture for nanoprocessor is fa... [more] ED2008-66 SDM2008-85
pp.139-144
SDM, ED 2008-07-11
15:50
Hokkaido Kaderu2・7 Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors
Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.) ED2008-102 SDM2008-121
We investigated the electrocatalytic activity of n-type InP porous nanostructures and the feasibility of their functiona... [more] ED2008-102 SDM2008-121
pp.327-330
SDM, ED 2008-07-11
15:05
Hokkaido Kaderu2・7 Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion
Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.) ED2008-106 SDM2008-125
A SiNx/GaN structure was prepared by ECR-CVD, and annealed at 1000 oC for 2 hours in N2 ambient. An XPS result showed th... [more] ED2008-106 SDM2008-125
pp.347-350
ED 2008-06-13
13:50
Ishikawa Kanazawa University Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT
Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) ED2008-24
 [more] ED2008-24
pp.11-16
ED, SDM 2008-01-31
11:15
Hokkaido   Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates
Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) ED2007-249 SDM2007-260
Implementation of active and sequential circuits on semiconductor-based nanowire networks with a specific topology and p... [more] ED2007-249 SDM2007-260
pp.63-68
ED, MW 2008-01-16
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138
The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] ED2007-207 MW2007-138
pp.7-10
SDM, R, ED 2007-11-16
14:15
Osaka   High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] R2007-49 ED2007-182 SDM2007-217
pp.19-22
CPM, ED, LQE 2007-10-11
17:35
Fukui Fukui Univ. UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] ED2007-164 CPM2007-90 LQE2007-65
pp.43-46
CPM, ED, LQE 2007-10-12
11:15
Fukui Fukui Univ. Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] ED2007-170 CPM2007-96 LQE2007-71
pp.73-76
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