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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2008-12-05 14:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology)  SDM2008-190 |
[more] | SDM2008-190 pp.31-35 |
| SDM | 2008-06-10 14:35 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] | SDM2008-57 pp.89-92 |
| SDM, OME | 2008-04-11 14:05 |
Okinawa | Okinawa Seinen Kaikan | Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10 |
We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] | SDM2008-10 OME2008-10 pp.47-50 |
| SDM | 2007-12-14 10:00 |
Nara | Nara Institute Science and Technology | Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST) SDM2007-222 |
Previously, we reported the fabrication method of high quality poly-Si thin film by using Ni core of ferritin with a dia... [more] | SDM2007-222 pp.1-4 |
| SDM | 2007-12-14 11:40 |
Nara | Nara Institute Science and Technology | Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
[more] | |
| SDM | 2007-12-14 15:10 |
Nara | Nara Institute Science and Technology | Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232 |
The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing proces... [more] | SDM2007-232 pp.43-46 |
| SDM | 2007-12-14 16:40 |
Nara | Nara Institute Science and Technology | Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] | SDM2007-234 pp.51-54 |
| SDM | 2007-06-07 16:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38 |
High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] | SDM2007-38 pp.37-42 |
| SDM | 2006-06-21 17:15 |
Hiroshima | Faculty Club, Hiroshima Univ. | Reduction of ferritin core embedded in Si thin film by thermal annealing Takashi Matsumura, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Shigeo Yoshii, Ichiro Yamashita (Panasonic) |
[more] | SDM2006-51 pp.55-59 |
| R, ED, SDM | 2005-11-25 10:10 |
Osaka | Central Electric Club | [Invited Talk]
Reliability Evaluation in Low Temperature Poly-Si Thin Film Transistors Yukiharu Uraoka, Takashi Fuyuki (NAIST) |
[more] | R2005-38 ED2005-173 SDM2005-192 pp.1-6 |
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