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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED |
2008-07-09 11:40 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] |
ED2008-41 SDM2008-60 pp.9-14 |
ED, MW |
2006-01-18 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio) |
A low-phase-noise76-GHz planar Gunn VCO using flip-chip bonding technology has been developed. The power consumption is ... [more] |
ED2005-192 MW2005-146 pp.1-5 |
ED, MW |
2006-01-19 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] |
ED2005-203 MW2005-157 pp.23-27 |
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