| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-10-29 15:20 |
Miyagi | Niche, Tohoku Univ. | Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)  SDM2015-73 |
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] | SDM2015-73 pp.13-16 |
| SDM | 2015-10-30 14:30 |
Miyagi | Niche, Tohoku Univ. | Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81 |
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] | SDM2015-81 pp.53-56 |
| SDM | 2015-10-30 15:30 |
Miyagi | Niche, Tohoku Univ. | Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-83 |
[more] | SDM2015-83 pp.63-68 |
| SDM | 2014-10-16 14:50 |
Miyagi | Niche, Tohoku Univ. | Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2014-85 pp.7-12 |
| SDM | 2014-10-17 10:00 |
Miyagi | Niche, Tohoku Univ. | Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-89 |
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] | SDM2014-89 pp.31-34 |
| SDM | 2014-10-17 13:50 |
Miyagi | Niche, Tohoku Univ. | Analysis of trap density causing random telegraph noise in MOSFETs Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93 |
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] | SDM2014-93 pp.55-59 |
| SDM | 2013-10-17 16:10 |
Miyagi | Niche, Tohoku Univ. | A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91 |
[more] | SDM2013-91 pp.15-20 |
| SDM | 2013-10-18 10:00 |
Miyagi | Niche, Tohoku Univ. | A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 |
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] | SDM2013-93 pp.27-31 |
| SDM | 2013-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98 |
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] | SDM2013-98 pp.51-56 |
| SDM | 2012-10-25 15:20 |
Miyagi | Tohoku Univ. (Niche) | Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2012-89 |
[more] | SDM2012-89 pp.1-4 |
| SDM | 2012-10-25 16:10 |
Miyagi | Tohoku Univ. (Niche) | Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 |
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] | SDM2012-91 pp.11-14 |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| SDM | 2012-10-26 09:55 |
Miyagi | Tohoku Univ. (Niche) | Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93 |
[more] | SDM2012-93 pp.21-26 |
| SDM | 2012-10-26 10:20 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) SDM2012-94 |
[more] | SDM2012-94 pp.27-32 |
| SDM | 2012-10-26 13:50 |
Miyagi | Tohoku Univ. (Niche) | Ultra high speed wet etching technology for a silicon wafer process Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-97 |
The silicon wafer thinning technology is important in three-dimensional integrated technology. In this paper, we conside... [more] | SDM2012-97 pp.41-45 |
| SDM, ED (Workshop) |
2012-06-27 14:45 |
Okinawa | Okinawa Seinen-kaikan | 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] | |
| SDM | 2011-10-20 14:20 |
Miyagi | Tohoku Univ. (Niche) | Reduction of Random Telegraph Noise with Broad Channel MOSFET Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98 |
Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] | SDM2011-98 pp.5-9 |
| SDM | 2011-10-20 14:45 |
Miyagi | Tohoku Univ. (Niche) | Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-99 |
[more] | SDM2011-99 pp.11-16 |
| SDM | 2011-10-20 15:45 |
Miyagi | Tohoku Univ. (Niche) | On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-101 |
[more] | SDM2011-101 pp.21-26 |
| SDM | 2011-10-20 16:10 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science Based New Silicon Technologies Tadahiro Ohmi (Tohoku Univ.) SDM2011-102 |
Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] | SDM2011-102 pp.27-36 |
[Return to Top Page]