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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2012-01-12
16:00		 Tokyo Kikai-Shinko-Kaikan Bldg X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power
Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA) ED2011-140 MW2011-163		 A Small Packaged Power Amplifier(PA) is developed at X-band. This amplifier has high gain by 2-stage amplifiers into 1-s... [more] ED2011-140 MW2011-163
pp.117-120
SANE 2007-04-16
13:25		 Overseas ARRC(Perth) A C-Band 500W Solid-State Power Amplifier using 90W GaAs FETs
Kazuhiro Kanto, Akihiro Satomi, Yasuaki Asahi, Shinji Takatsuka, Hideki Kimura, Hiroshi Kajio (Toshiba) SANE2007-16		 More than 500W of peak output power (pulse width 400μs, duty 20%) and over 27dB of power gain are achieved with newly de... [more] SANE2007-16
pp.85-90
MW, ED 2007-01-19
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. Over 80W Output Power X-band AlGaN/GaN HEMT
Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) 		AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-238 MW2006-191
pp.209-212
ED, CPM, LQE 2006-10-05
13:00		 Kyoto   X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) 		AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-152 CPM2006-89 LQE2006-56
pp.1-5
LQE, ED, CPM 2005-10-13
13:30		 Shiga Ritsumeikan Univ. C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) 		As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research inter... [more] ED2005-126 CPM2005-113 LQE2005-53
pp.39-42
 Results 1 - 5 of 5  /   
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