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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-10-30 10:50 |
Miyagi | Niche, Tohoku Univ. | Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)  SDM2015-78 |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] | SDM2015-78 pp.41-44 |
| SDM | 2015-10-30 14:30 |
Miyagi | Niche, Tohoku Univ. | Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81 |
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] | SDM2015-81 pp.53-56 |
| SDM | 2015-10-30 15:30 |
Miyagi | Niche, Tohoku Univ. | Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-83 |
[more] | SDM2015-83 pp.63-68 |
| SDM | 2014-10-16 14:50 |
Miyagi | Niche, Tohoku Univ. | Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2014-85 pp.7-12 |
| SDM | 2014-10-17 10:00 |
Miyagi | Niche, Tohoku Univ. | Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-89 |
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] | SDM2014-89 pp.31-34 |
| SDM | 2014-10-17 13:50 |
Miyagi | Niche, Tohoku Univ. | Analysis of trap density causing random telegraph noise in MOSFETs Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93 |
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] | SDM2014-93 pp.55-59 |
| SDM | 2013-10-17 16:10 |
Miyagi | Niche, Tohoku Univ. | A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91 |
[more] | SDM2013-91 pp.15-20 |
| SDM | 2013-10-18 09:30 |
Miyagi | Niche, Tohoku Univ. | Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) SDM2013-92 |
[more] | SDM2013-92 pp.21-25 |
| SDM | 2013-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98 |
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] | SDM2013-98 pp.51-56 |
| SDM | 2012-10-25 15:20 |
Miyagi | Tohoku Univ. (Niche) | Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2012-89 |
[more] | SDM2012-89 pp.1-4 |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| SDM | 2012-10-26 09:55 |
Miyagi | Tohoku Univ. (Niche) | Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93 |
[more] | SDM2012-93 pp.21-26 |
| SDM | 2012-10-26 10:20 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) SDM2012-94 |
[more] | SDM2012-94 pp.27-32 |
| SDM, ED (Workshop) |
2012-06-27 14:45 |
Okinawa | Okinawa Seinen-kaikan | 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] | |
| SDM | 2011-10-20 14:20 |
Miyagi | Tohoku Univ. (Niche) | Reduction of Random Telegraph Noise with Broad Channel MOSFET Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98 |
Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] | SDM2011-98 pp.5-9 |
| SDM | 2011-10-20 14:45 |
Miyagi | Tohoku Univ. (Niche) | Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-99 |
[more] | SDM2011-99 pp.11-16 |
| SDM | 2011-10-20 15:45 |
Miyagi | Tohoku Univ. (Niche) | On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-101 |
[more] | SDM2011-101 pp.21-26 |
| SDM | 2011-10-21 15:25 |
Miyagi | Tohoku Univ. (Niche) | High Purity Metal Organic Gas Distribution System Satoru Yamashita, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-112 |
The gas flow control is important factor that influenced to the concentration of process gas and the pressure of process... [more] | SDM2011-112 pp.85-90 |
| SDM | 2010-11-11 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Statistical Evaluation of Random Telegraph Sygnal in MOSFET Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-174 |
Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For ev... [more] | SDM2010-174 pp.17-22 |
| SDM | 2010-10-21 17:10 |
Miyagi | Tohoku University | Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-157 |
[more] | SDM2010-157 pp.25-30 |
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