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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2009-02-26 16:55 |
Hokkaido | Hokkaido Univ. | RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,)  ED2008-231 SDM2008-223 |
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] | ED2008-231 SDM2008-223 pp.41-46 |
| LQE, ED, CPM | 2008-11-28 11:40 |
Aichi | Nagoya Institute of Technology | Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119 |
Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] | ED2008-175 CPM2008-124 LQE2008-119 pp.115-120 |
| LQE, ED, CPM | 2008-11-28 13:05 |
Aichi | Nagoya Institute of Technology | Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-176 CPM2008-125 LQE2008-120 |
The AlGaN/GaN MOSFETs with HfO2 as a gate insulator deposited by ALD has been fabricated and characterized. The lower th... [more] | ED2008-176 CPM2008-125 LQE2008-120 pp.121-124 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| ED | 2008-06-14 09:50 |
Ishikawa | Kanazawa University | Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) ED2008-34 |
Fluidic Self-Assembly (FSA) is an innovative technique for heterogeneous integration. This technique enables us to assem... [more] | ED2008-34 pp.67-72 |
| ED, SDM | 2008-01-31 10:15 |
Hokkaido | Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258 |
Ultra-short pulse generations were demonstrated on the two types of resonant tunneling diode (RTD) pulse generators. T... [more] |
ED2007-247 SDM2007-258 pp.51-56 |
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| SDM, ED | 2007-02-01 14:10 |
Hokkaido | A resonant tunneling diode pair oscillator for high power operation Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
High power operation was demonstrated for the novel RTD oscillator circuit fabricated with metamorphic RTDs. The circuit... [more] | ED2006-242 SDM2006-230 pp.13-16 |
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