Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2018-02-28 11:30 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Design and fabrication of carbon-nanotube analog circuits on flexible substrate Tomoki Matsuura, Taiga Kashima, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2017-107 SDM2017-107 |
[more] |
ED2017-107 SDM2017-107 pp.15-18 |
ED, SDM |
2018-02-28 11:55 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Effect of electrolyte on electrical characteristics of carbon nanotube biosensor Kana Hasegawa, Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2017-108 SDM2017-108 |
We have studied electrical characteristics of carbon nanotube thin film transistors in the electrolytic solution. In par... [more] |
ED2017-108 SDM2017-108 pp.19-22 |
ED, SDM |
2018-02-28 15:05 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Fluidic generator with carbon nanotube thin film: Understanding the mechanism and enhancement of output power Ryohei Nishi, Shigeru Kishimoto (Nagoya Univ.), Hiromichi Kataura (AIST), Yutaka Ohno (Nagoya Univ.) ED2017-111 SDM2017-111 |
[more] |
ED2017-111 SDM2017-111 pp.31-34 |
ED, SDM |
2017-02-24 14:50 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
High-sensitivity electrochemical detection of neurotransmitters using carbon nanotube thin film Takuya Ushiyama, Nguyen Xuan Viet, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2016-137 SDM2016-154 |
We demonstrated the detection of neurotransmitters using carbon nanotube (CNT) thin film as a working electrode in an el... [more] |
ED2016-137 SDM2016-154 pp.41-45 |
ED, SDM |
2017-02-24 15:55 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Study on voltage generation by the interaction between electrolyte droplet and carbon nanotube thin film Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2016-139 SDM2016-156 |
[more] |
ED2016-139 SDM2016-156 pp.53-56 |
ED, SDM |
2016-03-04 10:00 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Large scale characterization of carbon nanotube thin-film transistors on plastic film Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) |
[more] |
|
SDM, ED |
2015-02-05 16:35 |
Hokkaido |
Hokkaido Univ. |
Enhancement of carrier injection in OLEDs by field concentration to carbon nanotube thin film Tatsuya Yamada, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2014-144 SDM2014-153 |
We propose an enhancement of carrier injection to OLED by using carbon-nanotube (CNT) thin film as transparent electrode... [more] |
ED2014-144 SDM2014-153 pp.33-38 |
SDM, ED |
2015-02-06 10:40 |
Hokkaido |
Hokkaido Univ. |
Fabrication of top-gate carbon nanotube thin-film transistor with short channel by high-speed printing technique Michihiko Maeda, Kentaro Higuchi, Shigeru Kishimoto (Nagoya Univ.), Takuya Tomura, Masafumi Takesue, Katsuhiko Hata (Bando Chemical), Yutaka Ohno (Nagoya Univ.) ED2014-149 SDM2014-158 |
We have fabricated short-channel, top-gate carbon nanotube thin-film transistors (CNT TFTs) with flexographic printing t... [more] |
ED2014-149 SDM2014-158 pp.63-67 |
SDM, ED |
2015-02-06 11:30 |
Hokkaido |
Hokkaido Univ. |
Operation Speed Improvement of Carbon Nanotube Integrated Circuits on Flexible Substrate Toshitada Sanzen (Nagoya Univ.), Antti Kaskela, Patrik Laiho, Albert G. Nasibulin (Aalto Univ.), Shigeru Kishimoto (Nagoya Univ.), Esko I. Kauppinen (Aalto Univ.), Yutaka Ohno (Nagoya Univ.) ED2014-151 SDM2014-160 |
We propose a new device structure of carbon nanotube thin-film transistor (CNT TFT) for an improvement of operation spee... [more] |
ED2014-151 SDM2014-160 pp.75-79 |
ED, SDM |
2014-02-27 14:40 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Fabrication and characterization of n-type carbon nanotube thin film transistors on plastic film Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2013-134 SDM2013-149 |
We realized high mobility n-type carbon nanotube thin-film transistors on a plastic film using the transfer process and ... [more] |
ED2013-134 SDM2013-149 pp.13-18 |
ED, SDM |
2014-02-27 15:05 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Fabrication of carbon nanotube thin-film transistors with high-speed flexographic printing technique Kentaro Higuchi (Nagoya Univ.), Yuta Nakajima, Takuya Tomura, Masafumi Takesue (Bando Chemical Industries), Shigeru Kishimoto (Nagoya Univ.), Katsuhiko Hata (Bando Chemical Industries), Yutaka Ohno (Nagoya Univ.) ED2013-135 SDM2013-150 |
We fabricated high-mobility carbon nanotube thin-film transistors (CNT TFTs) by fully non-lithographic and non-vacuum pr... [more] |
ED2013-135 SDM2013-150 pp.19-24 |
ED, SDM |
2014-02-28 09:50 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Patterning of carbon nanotube thin films by simple transfer process and its application for touch sensors Norihiro Fukaya (Nagoya Univ.), Dong Young Kim (Waseda Univ.), Shigeru Kishimoto (Nagoya Univ.), Suguru Noda (Waseda Univ.), Yutaka Ohno (Nagoya Univ.) ED2013-144 SDM2013-159 |
We propose a technique for easy micro-patterning of carbon-nanotube films on a plastic substrate. By utilizing this tech... [more] |
ED2013-144 SDM2013-159 pp.67-71 |
SDM, ED (Workshop) |
2012-06-29 11:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Carbon nanotube-based plastic electronics Yutaka Ohno (Nagoya Univ., Aalto Univ.), Dong-ming Sun, Kentaro Higuchi (Nagoya Univ.), Marina Y. Timmermans, Antti Kaskela, Albert G. Nasibulin (Aalto Univ.), Shigeru Kishimoto (Nagoya Univ.), Esko I. Kauppinen (Aalto Univ.), Takashi Mizutani (Nagoya Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-29 12:00 |
Okinawa |
Okinawa Seinen-kaikan |
Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes Masaki Inagaki, Kensuke Hata, Kazunari Shiozawa, Yasumitsu Miyata, Yutaka Ohno, Shigeru Kishimoto, Hisanori Shinohara, Takashi Mizutani (Nagoya Univ.) |
[more] |
|
ED, SDM |
2012-02-08 13:25 |
Hokkaido |
|
Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 |
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] |
ED2011-156 SDM2011-173 pp.83-87 |
CPM, SDM, ED |
2011-05-20 17:30 |
Aichi |
Nagoya Univ. (VBL) |
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49 |
We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical pr... [more] |
ED2011-36 CPM2011-43 SDM2011-49 pp.185-190 |
SDM, ED |
2011-02-23 16:05 |
Hokkaido |
Hokkaido Univ. |
Characterization of carbon nanotube thin-film transistors by scanning probe microscopy Yuki Okigawa, Yutaka Ohno (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2010-197 SDM2010-232 |
The electrical properties of CNT-FETs fabricated using PECVD were studied by scanning probe microscopy. The measured res... [more] |
ED2010-197 SDM2010-232 pp.31-36 |
ED |
2010-06-17 16:40 |
Ishikawa |
JAIST |
Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2010-41 |
[more] |
ED2010-41 pp.41-45 |
ED, SDM |
2010-02-23 09:30 |
Okinawa |
Okinawaken-Seinen-Kaikan |
[Invited Talk]
Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-205 SDM2009-202 |
In order to control the property of carbon nanotube field-effect transistors (CNFETs), it is important to understand pro... [more] |
ED2009-205 SDM2009-202 pp.53-58 |
ED, MW |
2010-01-14 14:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169 |
Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] |
ED2009-186 MW2009-169 pp.65-70 |