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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-26
16:00		 Online Online Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching
Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46		 (To be available after the conference date) [more] ED2021-34 CPM2021-68 LQE2021-46
pp.87-90
ED, MW 2020-01-31
11:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Simple Photoelectrochemical Etching for Recess Gate GaN HEMT
Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132		 Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] ED2019-98 MW2019-132
pp.25-28
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