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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2013-05-16
16:10		 Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
Muthusamy Omprakash, Mukannan Arivanandhan, Raman Aun Kumar, Hiroshi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Hiroshi Ikeda, Hirokazu Tatsuoka (Shizuoka Univ.), Yasunori Okano (Osaka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Sridharan Moorth Babu (Anna Univ.), Yasuhiro Hayakawa (Shizuoka Univ.) ED2013-21 CPM2013-6 SDM2013-28		  [more] ED2013-21 CPM2013-6 SDM2013-28
pp.27-31
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