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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, ITE-MMS 2022-12-08
15:55		 Ehime Ehime Univ. + Online
(Primary: On-site, Secondary: Online)		 Enhancement of magnetic relaxation constant by phase control of CoFeB/Sb2Te3
Misako Morota, Yuta Saito, Shogo Hatayama, Noriyuki Uchida (AIST) MRIS2022-23		 Chalcogenide materials such as Sb_2Te_3 and Bi_2Te_3 are known as phase-change materials, which can reversely change the... [more] MRIS2022-23
pp.28-31
SDM 2019-02-07
15:30		 Tokyo   [Invited Talk] New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama (AIST) SDM2018-96		  [more] SDM2018-96
pp.23-26
WIT, SP 2018-10-28
11:20		 Fukuoka Kyushu Institute of Technology(Kitakyushu) Criterion for detection process of ocular misalignment
Konomi Hirata (Univ. of Miyazaki), Noriyuki Uchida (KUHW), Asami Matsumoto, Masaya Kawakami, Kayoko Takatuka, Masayuki Mukunoki, Naonobu Okazaki (Univ. of Miyazaki) SP2018-45 WIT2018-33		 (To be available after the conference date) [more] SP2018-45 WIT2018-33
pp.67-72
SDM 2018-02-08
10:05		 Tokyo Tokyo Univ. [Invited Talk] Cluster-Preforming-Deposited Amorphous WSin (n = 12) Insertion Film of Low SBH and High Diffusion Barrier for Direct Cu Contact
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama (AIST) SDM2017-97		  [more] SDM2017-97
pp.1-4
SDM 2015-06-19
17:10		 Aichi VBL, Nagoya Univ. [Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56		 We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scatteri... [more] SDM2015-56
pp.99-103
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