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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)		 2012-06-28
10:00		 Okinawa Okinawa Seinen-kaikan Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) 		Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more]
SDM 2012-06-21
10:55		 Aichi VBL, Nagoya Univ. Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48		 To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] SDM2012-48
pp.27-32
SDM 2012-06-21
11:35		 Aichi VBL, Nagoya Univ. Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50		 We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] SDM2012-50
pp.37-42
SDM 2009-06-19
11:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Properties of Ge MIS Interface Defects
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30		 The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] SDM2009-30
pp.21-26
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