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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
NS, ICM, CQ, NV (Joint) |
2022-11-25 15:25 |
Fukuoka |
Humanities and Social Sciences Center, Fukuoka Univ. + Online (Primary: On-site, Secondary: Online) |
[Invited Talk]
AI and Sensing Techniques enabled by Post-5G Networks Takahito Tanimura, Hisanori Matsumoto, Norikatsu Takaura, Akio Shima, Michitaka Okuno (Hitachi) NS2022-126 CQ2022-59 ICM2022-29 |
In post-5G/6G era as a successor of current 5G era, it will be realized that both evolving communication functions, such... [more] |
NS2022-126 CQ2022-59 ICM2022-29 p.136(NS), p.57(CQ), p.30(ICM) |
SC |
2021-03-19 11:10 |
Online |
Online |
A Study on Fog Computing Testbed for Flexible Device Connectivity at the Cloud and Edge. Shunsuke Kikuchi (SAKURA internet), Akiko Masaki, Keiichi Mitani, Keita Yamane, Norikatsu Takaura (Hitachi) SC2020-35 |
(To be available after the conference date) [more] |
SC2020-35 pp.13-18 |
ICD, SDM, ITE-IST [detail] |
2020-08-07 13:00 |
Online |
Online |
[Invited Talk]
5G Edge Computing for Industrial Applications Norikatsu Takaura (Hitachi) SDM2020-10 ICD2020-10 |
[more] |
SDM2020-10 ICD2020-10 pp.47-48 |
ICD |
2015-04-17 10:00 |
Nagano |
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[Invited Talk]
GexTe1-x/Sb2Te3 Topological switching random access memory (TRAM) Norikatsu Takaura (LEAP) ICD2015-8 |
[more] |
ICD2015-8 pp.33-37 |
ICD |
2013-04-11 09:00 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Talk]
A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP) ICD2013-1 |
[more] |
ICD2013-1 pp.1-4 |
ICD |
2011-04-18 15:20 |
Hyogo |
Kobe University Takigawa Memorial Hall |
[Invited Talk]
Trend in Phase Change Memory and activity in TIA Norikatsu Takaura (LEAP) ICD2011-6 |
This paper reports on trend in phase change memory (PCM) and research activity in Tsukuba Innovation Arena (TIA) . We di... [more] |
ICD2011-6 pp.33-36 |
ITE-MMS, MRIS |
2009-10-09 10:25 |
Fukuoka |
FUKUOKA traffic center |
[Invited Talk]
Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
MR2009-26 pp.31-35 |
ICD, SDM |
2009-07-17 12:00 |
Tokyo |
Tokyo Institute of Technology |
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
SDM2009-112 ICD2009-28 pp.79-83 |
ICD |
2007-04-12 11:10 |
Oita |
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[Invited Talk]
A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current Akira Kotabe, Satoru Hanzawa (Hitachi), Naoki Kitai (Hitachi ULSI), Kenichi Osada, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura (Hitachi), Masahiro Moniwa (Renesas), Takayuki Kawahara (Hitachi) ICD2007-5 |
An experimental 512-kB embedded Phase Change Memory (PCM) is developed in a 0.13-μm 1.5-V CMOS technology. Three circuit... [more] |
ICD2007-5 pp.23-28 |
SDM |
2007-03-15 13:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) |
A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., c... [more] |
SDM2006-254 pp.1-6 |
ICD, ITE-CE |
2006-01-26 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Phase Change RAM Operated with 1.5-V CMOS as Low Cost Embedded Memory Satoru Hanzawa, Kenichi Osada, Takayuki Kawahara, Riichiro Takemura (Hitachi CRL), Naoki Kitai (Hitachi ULSI), Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi (Hitachi CRL), Hiroshi Moriya (Hitachi MERL), Masahiro Moniwa (Renesas) |
This paper describes a phase change (PC) RAM operated at the lowest possible voltage, 1.5 V, with a CMOS memory array, u... [more] |
ICD2005-206 pp.7-12 |
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