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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2021-12-21
10:20		 Miyagi
(Primary: On-site, Secondary: Online)		 Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures
Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57		 We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] ED2021-57
pp.44-47
ED, THz [detail] 2019-12-23
16:45		 Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83		 We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
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