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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-12-17 14:50 |
Kyoto |
Kyoto Univ. (Katsura) |
Properties of the oxidized layers on SiC in supercritical water Tomohisa Satoh (Osaka Univ.), Takashi Futatsuki, Taro Oe (Organo), Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) SDM2010-196 |
[more] |
SDM2010-196 pp.63-67 |
ED |
2008-06-13 14:15 |
Ishikawa |
Kanazawa University |
Characterization of N-doped AlSiO film for wide bandgap semiconductors Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25 |
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] |
ED2008-25 pp.17-22 |
SDM, R, ED |
2007-11-16 13:00 |
Osaka |
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Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214 |
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] |
R2007-46 ED2007-179 SDM2007-214 pp.1-6 |
SDM, R, ED |
2007-11-16 13:50 |
Osaka |
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Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) R2007-48 ED2007-181 SDM2007-216 |
The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap,... [more] |
R2007-48 ED2007-181 SDM2007-216 pp.13-17 |
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