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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-12-07
10:45		 Kyoto Kyoto Univ. (Katsura) Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20)
Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118		 We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] SDM2012-118
pp.19-23
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