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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-10-23 14:20 |
Miyagi |
Niche, Tohoku Univ. |
A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] |
SDM2019-54 pp.7-10 |
SDM |
2019-10-23 15:40 |
Miyagi |
Niche, Tohoku Univ. |
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] |
SDM2019-56 pp.17-20 |
SDM |
2019-10-24 10:50 |
Miyagi |
Niche, Tohoku Univ. |
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-61 |
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with d... [more] |
SDM2019-61 pp.39-43 |
SDM |
2018-10-18 10:20 |
Miyagi |
Niche, Tohoku Univ. |
Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58 |
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] |
SDM2018-58 pp.31-34 |
SDM |
2018-10-18 10:50 |
Miyagi |
Niche, Tohoku Univ. |
Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59 |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] |
SDM2018-59 pp.35-40 |
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