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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2016-07-22 16:30 |
Ehime | Growth of preferential orientation of Cu (111) plane on the thin HfNx film Masaru Sato (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Mayumi B. takeyama (Kitami Inst. of Tech.)  CPM2016-27 |
[more] | CPM2016-27 pp.15-18 |
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| SDM | 2016-01-22 13:00 |
Tokyo | Sanjo Conference Hall, The University of Tokyo | [Invited Talk]
characterization of nitride thin film deposited at low temperatures Mayumi B. Takeyama, Masaru Sato (Kitami inst.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami inst.) SDM2015-112 |
[more] | SDM2015-112 pp.17-20 |
| SDM | 2016-01-22 13:35 |
Tokyo | Sanjo Conference Hall, The University of Tokyo | Characteristic of TiNx film by low temperature deposition using radical treatment Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) SDM2015-113 |
[more] | SDM2015-113 pp.21-24 |
| CPM | 2015-11-06 14:55 |
Niigata | Machinaka Campus Nagaoka | Characterization of SiNx films deposited at room temperature Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-88 |
[more] | CPM2015-88 pp.23-26 |
| CPM | 2015-11-06 15:15 |
Niigata | Machinaka Campus Nagaoka | Properties of transition metal nitride deposited by combination of sputtering and radical treatment Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-89 |
We have proposed the low temperature deposition method of preparing transition metal nitride films by combination of spu... [more] | CPM2015-89 pp.27-30 |
| CPM | 2015-08-10 14:40 |
Aomori | Low temperature deposition of SiNx films as an insulating barrier Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-34 |
[more] | CPM2015-34 pp.15-18 |
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| CPM | 2015-08-11 09:40 |
Aomori | Low temperature deposition of HfNx film by radical reaction Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40 |
We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] | CPM2015-40 pp.47-50 |
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| CPM | 2014-10-24 17:40 |
Nagano | Silicidation reaction in Ni/Si system with thin interposed SiO2 layer Atsushi Noya, Mayumi B. Takeyama (Kitami Inst. Technol.) CPM2014-113 |
In the Ni/Si system, we have reported that the composition of an amorphous alloy formed by intermixing between Ni and Si... [more] | CPM2014-113 pp.45-48 |
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| CPM | 2014-10-25 09:20 |
Nagano | Barrier properties of Zr3N4 insulating films deposited at low temperatures Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Tech.) CPM2014-114 |
[more] | CPM2014-114 pp.49-52 |
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| CPM | 2014-10-25 09:40 |
Nagano | Characterization of low-temperature deposited SiNx films applicable to 3D/2.5D-IC Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (FUJITSU LAB.LTD.), Atsushi Noya (Kitami Inst. of Tech.) CPM2014-115 |
3-dimensional stacked LSI and/or 2.5-D IC is attracted much attention to solve the issues how to develop the integration... [more] | CPM2014-115 pp.53-56 |
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| CPM | 2013-10-24 16:55 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Properties of SiNx films prepared by low process temperature Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (FUJITSU LAB.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-100 |
3-dimensional stacked LSI is attracted much attention to solve the issues how to develop the integration density and/or ... [more] | CPM2013-100 pp.35-39 |
| CPM | 2013-10-24 17:20 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Oxidation characteristic of Al-Nb alloy films as a capping layer on Cu Atsushi Noya, Mayumi B. Takeyama (Kitami Inst. of Tech.) CPM2013-101 |
[more] | CPM2013-101 pp.41-44 |
| CPM | 2013-08-01 13:30 |
Hokkaido | Formation of chemically inert interface between Al and Al3Nb thin films Atsushi Noya, Mayumi B. Takeyama (Kitami Inst. of Tech.) CPM2013-46 |
Abstract We propose a chemically inert interface, at which no solid-phase reaction takes place, between Al and an under... [more] | CPM2013-46 pp.35-38 |
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| CPM | 2013-08-02 10:55 |
Hokkaido | Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-51 |
Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose conc... [more] | CPM2013-51 pp.63-68 |
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| CPM | 2013-08-02 11:15 |
Hokkaido | Barrier properties of TaWN films in Cu/Si contact Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Tech.) CPM2013-52 |
In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of hig... [more] | CPM2013-52 pp.69-72 |
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| CPM | 2012-10-26 17:55 |
Niigata | Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I)
-- Diffusion behavior of Va transition metal -- Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) CPM2012-103 |
Cu multi-level interconnects in Si-LSIs require an effective barrier metal between Cu and a field insulating layer as a ... [more] | CPM2012-103 pp.55-60 |
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| CPM | 2012-08-09 09:25 |
Yamagata | Formation process of reactively-sputtered nano-crystalline ZrNx barrier films Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2012-44 |
Thin diffusion barriers of high performance in several nm thicknesses are required as the size of Cu multilevel intercon... [more] | CPM2012-44 pp.45-49 |
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| CPM | 2012-08-09 09:50 |
Yamagata | Low temperature deposition of SiNx thin films by radical-assisted reaction Mayumi B. Takeyama, Masaru Sato (Kitami Inst. Technol.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (Fujitsu Lab. Ltd.), Atsushi Noya (Kitami Inst. Technol.) CPM2012-45 |
3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or funct... [more] | CPM2012-45 pp.51-54 |
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| CPM | 2011-10-26 16:50 |
Fukui | Fukui Univ. | Formation of NiSi silicide and its application to Cu contacts Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-117 |
[more] | CPM2011-117 pp.41-45 |
| CPM | 2011-08-10 15:20 |
Aomori | Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-61 |
We have examined characteristics of ZrBx thin films with off-stoichiometry from the ZrB2 compound as an application as a... [more] | CPM2011-61 pp.27-30 |
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