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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.)  R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| LQE, ED, CPM | 2011-11-17 15:40 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] | ED2011-83 CPM2011-132 LQE2011-106 pp.49-54 |
| ED, MW | 2010-01-14 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170 |
[more] | ED2009-187 MW2009-170 pp.71-76 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66 |
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] | ED2009-71 SDM2009-66 pp.93-98 |
| ED | 2009-06-11 16:25 |
Tokyo | Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] | ED2009-42 pp.31-36 |
|
| LQE, ED, CPM | 2008-11-28 14:55 |
Aichi | Nagoya Institute of Technology | Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) ED2008-180 CPM2008-129 LQE2008-124 |
We fabricated InxAl1-xN/Al0.38Ga0.62N/AlN/GaN hetero-structures with flat surfaces and high electron mobility. The densi... [more] | ED2008-180 CPM2008-129 LQE2008-124 pp.141-144 |
| CPM, ED, SDM | 2008-05-16 09:50 |
Aichi | Nagoya Institute of Technology | Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] | ED2008-11 CPM2008-19 SDM2008-31 pp.51-56 |
| MW, ED | 2007-01-19 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT) |
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] | ED2006-233 MW2006-186 pp.183-187 |
| ED, MW | 2006-01-19 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 0.15-mm-dual-gate AlGaN/GaN HEMT mixers Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) |
[more] | ED2005-206 MW2005-160 pp.41-44 |
| LQE, ED, CPM | 2005-10-13 13:50 |
Shiga | Ritsumeikan Univ. | Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) |
[more] | ED2005-127 CPM2005-114 LQE2005-54 pp.43-46 |
| MW, ED | 2005-01-18 09:45 |
Tokyo | - Narihiko Maeda, -, Takashi Makimura, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (NTT) |
[more] | ED2004-213 MW2004-220 pp.7-12 |
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