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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, OPE, EMT, MWP, EST, IEE-EMT [detail] | 2014-07-17 10:25 |
Hokkaido | Muroran Inst. of Tech. | X Band High Power and High Efficiency Amplifier with 2nd Harmoics rejection circuits Eigo Kuwata, Koji Yamanaka, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Akihiro Ando, Kazuhiko Nakahara, Hiroshi Fukumoto (Mitsubishi Electric)  MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 |
[more] | MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 pp.7-10 |
| MW | 2014-03-05 14:20 |
Ehime | Ehime University | An X-Band GaN High-Power Amplifier with Input and Output 2nd-harmonic Terminating Networks Hiromitsu Uchida, Masatake Hangai, Koji Yamanaka, Hiroshi Fukumoto, Nobuhiro Kikuchi, Hidetoshi Koyama, Yoshitaka Kamo (Mitsubishi Electric) MW2013-219 |
[more] | MW2013-219 pp.129-132 |
| MW, ED | 2013-01-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] | ED2012-121 MW2012-151 pp.49-52 |
| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| MW | 2012-11-21 14:45 |
Okinawa | [Special Talk]
Report on 2012 IEEE MTT-S International Microwave Symposium Takashi Shimizu (Utsunomiya Univ.), Masataka Ohira (Saitama Univ.), Hiroshi Okazaki (NTT DOCOMO), Chun-Ping Chen (Kanagawa Univ.), Shoichi Narahashi (NTT DOCOMO), Ramesh Pokharel (Kyushu Univ.), Koji Yamanaka (Mitsubishi Electric Corp.) MW2012-116 |
This is a report on 2012 IEEE MTT-S International Microwave Symposium held at Montreal, QC, CA, June 18-22, 2012. It co... [more] | MW2012-116 pp.13-22 |
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| MWP, OPE, MW, EMT, EST, IEE-EMT [detail] | 2012-07-26 09:30 |
Hokkaido | Hokkaido Univ. | An S-Band 170W/70% Partially-Matched GaN HEMT Power Amplifier
-- Efficiency Increase by Harmonic Termination for GaN-on-Si Device -- Naoki Kosaka, Hiromitsu Uchida, Hifumi Noto, Koji Yamanaka, Masatoshi Nakayama, Yoshihito Hirano, Akira Inoue, Yoichi Nogami, Ko Kanaya (Mitsubishi Electric Corp.) MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 |
[more] | MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 pp.7-10 |
| MW | 2012-06-29 14:00 |
Gifu | Gifu Univ. | C-band 220W High Efficiency GaN Amplifier Hiroaki Maehara, Koji Yamanaka, Naoki Kosaka, Jun Nishihara, Keiichi Kawashima, Masatoshi Nakayama (Mitsubishi Electric) MW2012-22 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. Recen... [more] | MW2012-22 pp.19-24 |
| EST | 2012-06-01 15:45 |
Tokyo | Aoyama Gakuin University(Aoyama Campus) | A Basic Study on A Lossy Impedance-Matching Network with Directional Coupler and Reflection Circuit Hiromitsu Uchida, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.) EST2012-6 |
[more] | EST2012-6 pp.33-38 |
| MW | 2012-03-01 13:15 |
Saga | Saga University | An X-band GaN High-Power Amplifier with a Parallel-Resonant 2nd-Harmonic Input Terminating Network Hiromitsu Uchida, Hiroshi Otsuka, Koji Yamanaka, Hidetoshi Koyama, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric Corp.) MW2011-174 |
[more] | MW2011-174 pp.35-40 |
| MW | 2012-03-01 13:45 |
Saga | Saga University | How to improve efficiency of over 100W output power GaN High Power Amplifiers using Harmonic Termination Technique Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) MW2011-175 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at S-band is presented. Recen... [more] | MW2011-175 pp.41-46 |
| MW | 2012-03-01 16:15 |
Saga | Saga University | [Special Talk]
An Attendee Report on European Microwave Week 2011 Yasushi Horii (Kansai Univ.), Akimichi Hirota (Mitsubishi Electric), Chun-Ping Chen (Kanagawa Univ.), Kunihiro Kawai (NTT DOCOMO), Koji Yamanaka (Mitsubishi Electric), Ramesh Pokharel (Kyushu Univ.) MW2011-177 |
This is an attendee report on the international conference of European Microwave Week (EuMW) 2011, including a statistic... [more] | MW2011-177 pp.53-60 |
| MW | 2011-10-20 09:00 |
Tokyo | The University of Electro-Communications | X-Band 120W internally matched GaN amplifier in small package Hiroaki Maehara, Hiromitsu Uchida, Hiromitsu Utsumi, Jun Nishihara, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Melco) MW2011-85 |
In this paper, a small package internally matched GaN HEMT high power amplifier operating at X-band is presented. Radar ... [more] | MW2011-85 pp.1-5 |
| OPE, MW, MWP, EMT, EST, IEE-EMT [detail] | 2011-07-22 11:25 |
Hokkaido | C-Ku band ultra broadband GaN MMIC amplifier with 20W output power Eigo Kuwata, Koji Yamanaka, Hidetoshi Koyama, Tasuku Kirikoshi, Masatoshi Nakayama, Yoshihito Hirano (Melco) MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 |
[more] | MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 pp.119-123 |
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| EMCJ, MW, EST | 2011-05-26 14:35 |
Tokyo | NICT | L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) EMCJ2011-17 MW2011-14 EST2011-10 |
In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Re... [more] | EMCJ2011-17 MW2011-14 EST2011-10 pp.45-50 |
| MW, ED | 2011-01-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Broadband High Efficiency Class-E GaN HEMT Amplifier Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) ED2010-179 MW2010-139 |
In this paper, a broadband high efficiency class-E GaN HEMT amplifier is presented. Recently, many over 100W output powe... [more] | ED2010-179 MW2010-139 pp.23-28 |
| SANE | 2010-06-24 10:20 |
Ibaraki | Tsukuba Space Center (JAXA) | HTV Operation Results Koji Yamanaka, Dai Asoh (JAXA) SANE2010-16 |
[more] | SANE2010-16 pp.13-16 |
| SANE | 2010-06-24 10:40 |
Ibaraki | Tsukuba Space Center (JAXA) | HTV Rendezvous System Development and Operation Hirohiko Uematsu, Koji Yamanaka (JAXA) SANE2010-17 |
[more] | SANE2010-17 pp.17-22 |
| MW | 2010-05-13 16:00 |
Hyogo | University of Hyogo | 11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] | MW2010-17 pp.17-22 |
| EMCJ, MW, IEE-MAG | 2009-10-23 14:00 |
Iwate | Iwate Univ. | A Reflection-Absorptive Band-Rejection Filter with a Dual-Band Wilkinson Power Divider
-- An Introduction of a Synthesis Tool for Wilkinson Power Divider -- Hiromitsu Uchida, Koji Yamanaka, Kazuhisa Yamauchi, Akira Inoue, Yoshihito Hirano, Moriyasu Miyazaki (Mitsubishi Electric Corp.) EMCJ2009-70 MW2009-119 |
Harmonic-termination technique is often introduced to RF high-power amplifiers in order to boost its efficiency. At the ... [more] | EMCJ2009-70 MW2009-119 pp.153-158 |
| OPE, EMT, MW | 2009-07-31 09:50 |
Hokkaido | Asahikawa Civic Culture Hall | C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] | MW2009-68 OPE2009-68 pp.205-209 |
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