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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2015-04-16
16:05		 Nagano   [Invited Lecture] A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology
Mario Sako, Takao Nakajima, Junpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Yoshinao Suzuki, Yoshihisa Watanabe (Toshiba), Ryuji Yamashita (SanDisk) ICD2015-6		 A 75mm2 low power 64Gb MLC NAND flash memory capable of 30MB/s program throughput and 533MB/s data transfer rate at 1.8V... [more] ICD2015-6
pp.27-30
EE, CPM 2015-02-27
13:00		 Tokyo NTT Musashino R&D Center Proposal of AC Battery Cells with Semi-permanent Life using Flywheel
Keisuke Nakano, Koji Kato, Satoru Ishiguma, Youichi Ito (Sanken Electric), Yoshiya Ohnuma (Nagaoka Power Electronics) EE2014-45 CPM2014-159		  [more] EE2014-45 CPM2014-159
pp.25-30
ICD 2009-04-14
13:00		 Miyagi Daikanso (Matsushima, Miyagi) [Invited Talk] A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.) ICD2009-8		 A 113mm2 32Gbit 3bit/cell (8-levels) NAND Flash memory using 32nm CMOS technology is developed. This 32Gbit Flash die is... [more] ICD2009-8
pp.39-42
RCS, AP 2004-10-29
09:55		 Niigata Niigata University Reactance Value Optimization of Two- and Three-Element ESPAR Antennas in Consideration of Diversity Performance and Impedance Matching
Koji Kato, Kyouichi Iigusa, Makoto Taromaru, Takashi Ohira (ATR) 		 [more] AP2004-154 RCS2004-175
pp.7-12
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