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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 28 of 28 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-01-27
16:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology
Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-145		  [more] SDM2014-145
pp.41-44
SDM 2015-01-27
16:45		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform
Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146		 Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] SDM2014-146
pp.45-48
ICD, SDM 2014-08-04
13:05		 Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36		 Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] SDM2014-67 ICD2014-36
pp.29-34
SDM, ICD 2013-08-01
09:25		 Ishikawa Kanazawa University Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48		 A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The... [more] SDM2013-66 ICD2013-48
pp.7-12
SDM 2012-11-16
14:15		 Tokyo Kikai-Shinko-Kaikan Bldg Nonlocal band to band tunneling model for tunnel-FETs -- Device and circuit models --
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111		 Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device model... [more] SDM2012-111
pp.63-68
SDM 2011-11-10
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of STM Carrier Profiling
Koichi Fukuda, Masayasu Nishizawa, Tetsuya Tada (AIST), Leonid Bolotov (Tsukuba Univ.), Kaina Suzuki, Shigeo Sato (Fujitsu Semiconductor), Hiroshi Arimoto, Toshihiko Kanayama (AIST) SDM2011-119		  [more] SDM2011-119
pp.21-26
ICD 2011-04-18
13:30		 Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] Technology Trend of NAND Flash Memories -- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology --
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) ICD2011-4		 A 64Gbit 2bit/cell NAND flash memory capable of 14MB/s programming and 266MB/s data transfer is fabricated in 24nm techn... [more] ICD2011-4
pp.19-26
ICD 2005-04-14
15:45		 Fukuoka   A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology
Takumi Abe, Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka (Toshiba), Teruhiko Kamei, Hiroaki Nasu (SanDisk) 		 [more] ICD2005-10
pp.47-52
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