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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2010-07-02 10:50 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 |
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] |
ED2010-107 SDM2010-108 pp.249-252 |
SDM, ED |
2009-06-25 11:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-74 SDM2009-69 |
[more] |
ED2009-74 SDM2009-69 pp.109-112 |
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