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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) ED2010-189 MW2010-149		 Increasing the capacitance density would be a very effective way of making InP IC chips smaller because capacitors occup... [more] ED2010-189 MW2010-149
pp.75-80
CPM, ED, SDM 2008-05-16
09:50		 Aichi Nagoya Institute of Technology Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures
Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31		 In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] ED2008-11 CPM2008-19 SDM2008-31
pp.51-56
LQE, ED, CPM 2005-10-13
17:00		 Shiga Ritsumeikan Univ. Surface acoustic wave devices fabricated on n+ GaN/undoped GaN layers
Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama (NTT), Kohji Hohkawa (Kanagawa Inst. Technol.) 		 [more] ED2005-136 CPM2005-123 LQE2005-63
pp.85-88
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