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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 27  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
13:05
Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)
[Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75
Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] SDM2023-75
pp.5-8
SDM 2023-11-09
11:20
Tokyo
(Primary: On-site, Secondary: Online)
[Invited Talk] Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Jun Suda (Nagoya Univ.) SDM2023-63
Recent progress of GaN vertical power devices which fabricated on n-type GaN bulk substates. Fundamental properties of ... [more] SDM2023-63
p.7
WPT, EE
(Joint)
2020-10-07
13:40
Online Online Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT
Hidemasa Takahashi, Yuji Ando (Nagoya Univ.), Yoichi Tsuchiya, Akio Wakejima (NITECH), Hiroaki Hayashi, Eiji Yagyu (Mitsubishi Electric), Koichi Kikkawa, Naoki Sakai, Kenji Itoh (Kanazawa Institute of Tech), Jun Suda (Nagoya Univ.) WPT2020-19
As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that s... [more] WPT2020-19
pp.1-5
CPM, LQE, ED 2019-11-21
13:20
Shizuoka Shizuoka Univ. (Hamamatsu) Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83
(To be available after the conference date) [more] ED2019-40 CPM2019-59 LQE2019-83
pp.33-35
MW, ED 2017-01-26
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Towards Realization of GaN Vertical Power Devices
Jun Suda (Kyoto Univ.) ED2016-99 MW2016-175
GaN vertical power devices have attracted much attention as next-generation high-voltage low-on-resistance power devices... [more] ED2016-99 MW2016-175
pp.17-18
CPM, LQE, ED 2016-12-12
13:50
Kyoto Kyoto University Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-59 CPM2016-92 LQE2016-75
 [more] ED2016-59 CPM2016-92 LQE2016-75
pp.9-14
CPM, LQE, ED 2016-12-12
14:40
Kyoto Kyoto University Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] ED2016-61 CPM2016-94 LQE2016-77
pp.21-26
SDM, EID 2016-12-12
14:45
Nara NAIST Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC
Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103
In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes suppl... [more] EID2016-22 SDM2016-103
pp.59-62
ED, LQE, CPM 2015-11-26
13:10
Osaka Osaka City University Media Center Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements
Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] ED2015-72 CPM2015-107 LQE2015-104
pp.21-25
ED, LQE, CPM 2015-11-26
13:35
Osaka Osaka City University Media Center Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105
 [more] ED2015-73 CPM2015-108 LQE2015-105
pp.27-32
ED, LQE, CPM 2015-11-26
14:00
Osaka Osaka City University Media Center Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106
 [more] ED2015-74 CPM2015-109 LQE2015-106
pp.33-37
SDM, EID 2014-12-12
10:00
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
SDM, EID 2014-12-12
10:15
Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
pp.7-11
SDM, EID 2014-12-12
16:45
Kyoto Kyoto University Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] EID2014-35 SDM2014-130
pp.115-118
SDM 2013-12-13
16:40
Nara NAIST Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] SDM2013-131
pp.91-96
SDM 2013-12-13
17:20
Nara NAIST Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] SDM2013-133
pp.101-105
SDM 2012-12-07
10:00
Kyoto Kyoto Univ. (Katsura) Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] SDM2012-115
pp.1-5
SDM 2011-12-16
11:00
Nara NAIST Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] SDM2011-135
pp.17-21
SDM 2011-12-16
16:20
Nara NAIST Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] SDM2011-146
pp.77-82
LQE, ED, CPM 2011-11-17
10:05
Kyoto Katsura Hall,Kyoto Univ. AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] ED2011-73 CPM2011-122 LQE2011-96
pp.1-4
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