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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2023-08-02 14:00 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Technology Trends in CMOS Devices for Advanced Logic LSIs
-- FinFET, BS-PDN, GAA-NS-FET, CFET, 2D-CFET -- Hitoshi Wakabayashi (Tokyo Tech) SDM2023-46 ICD2023-25 |
Technology Trends in CMOS Devices are going to be discussed for Advanced Logic LSIs. [more] |
SDM2023-46 ICD2023-25 pp.50-55 |
SDM |
2022-11-10 10:00 |
Online |
Online |
[Invited Talk]
CMOS Device Technology and IRDS Hitoshi Wakabayashi (Tokyo Tech) SDM2022-64 |
CMOS Device Technology and International Roadmap for Devices and Systems (IRDS) are going to be discussed for logic LSIs... [more] |
SDM2022-64 pp.1-6 |
SDM |
2022-06-21 15:10 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Lecture]
Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD. Atsushi Ogura, Ryo Yokogawa (Meiji Univ., MREL), Hitoshi Wakabayashi (Tokyo Tech.) SDM2022-28 |
[more] |
SDM2022-28 pp.16-19 |
SDM |
2022-06-21 16:40 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Talk]
Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech) SDM2022-30 |
[more] |
SDM2022-30 pp.23-26 |
SDM |
2021-06-22 14:40 |
Online |
Online |
[Invited Lecture]
FET characteristics with 2D channel Hitoshi Wakabayashi (Tokyo Tech) SDM2021-24 |
MISFETs with 2D channel have been reviewed for advanced CMOS devices, in which TMDC PVD and following sulfurization proc... [more] |
SDM2021-24 pp.13-15 |
SDM |
2020-11-20 11:30 |
Online |
Online |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements -- Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
[more] |
SDM2020-30 pp.36-40 |
SDM |
2019-11-08 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77 pp.45-48 |
SDM, ICD, ITE-IST [detail] |
2019-08-08 10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] |
SDM2019-42 ICD2019-7 pp.31-34 |
SDM |
2019-06-21 14:30 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] |
SDM2019-30 pp.23-27 |
SDM |
2017-06-20 15:15 |
Tokyo |
Campus Innovation Center Tokyo |
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27 |
[more] |
SDM2017-27 pp.31-34 |
SDM |
2017-06-20 16:10 |
Tokyo |
Campus Innovation Center Tokyo |
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
[more] |
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SDM |
2016-06-29 13:30 |
Tokyo |
Campus Innovation Center Tokyo |
A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] |
SDM2016-38 pp.33-36 |
SDM |
2016-06-29 16:40 |
Tokyo |
Campus Innovation Center Tokyo |
MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] |
SDM2016-46 pp.75-78 |
ICD |
2014-01-28 13:00 |
Kyoto |
Kyoto Univ. Tokeidai Kinenkan |
[Invited Talk]
Advanced CMOS Device Technologies as Multi-Functional LSI Platform Hitoshi Wakabayashi (Tokyo Tech) |
(To be available after the conference date) [more] |
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SDM, ED (Workshop) |
2012-06-27 09:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Keynote Address]
More-than-Moore Devices based on Advanced CMOS Technologies Hitoshi Wakabayashi (Sony) |
Based on the discussion on advanced CMOS device technologies using benchmark data, more-than-Moore devices are introduce... [more] |
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