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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2023-12-01 16:40 |
Shizuoka |
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Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima (Nippon Tungsten), Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara (RIKEN), Sachie Fujikawa, Hiroyuki Yaguchi (Saitama Univ), Yasushi Iwaisako (Nippon Tungsten), Hideki Hirayama (RIKEN) ED2023-37 CPM2023-79 LQE2023-77 |
AlGaN-based 230nm-band far-UVC LEDs that is harmless to the human body were developed toward achievements of shorter wav... [more] |
ED2023-37 CPM2023-79 LQE2023-77 pp.102-105 |
ITE-IDY, EID, SID-JC [detail] |
2022-07-29 15:45 |
Online |
Online (Zoom) |
[Invited Talk]
Decoration of Outdoor/Indoor Walls by using Electronic Tiles Makoto Omodani, Hiroyuki Yaguchi (Tokyo Denki Univ.), Fusako Kusunoki (Tama Art Univ.) |
[more] |
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CPM, LQE, ED |
2019-11-22 12:45 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Progress of UVC-LEDs using DC sputter AlN templates Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu, Syunsuke Kuwaba (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN) ED2019-53 CPM2019-72 LQE2019-96 |
A high-quality AlN substrate or template is required to realize AlGaN-based UVC-LEDs which has a wide range of applicati... [more] |
ED2019-53 CPM2019-72 LQE2019-96 pp.85-88 |
SDM |
2013-06-18 16:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] |
SDM2013-62 pp.91-96 |
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