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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2015-08-25
09:30		 Kumamoto Kumamoto City [Invited Talk] Low-Power Embedded ReRAM Technology for IoT Applications
Makoto Ueki, Akira Tanabe, Hiroshi Sunamura, Mitsuru Narihiro, Kazuya Uejima, Koji Masuzaki, Naoya Furutake, Akira Mitsuiki, Koichi Takeda, Takashi Hase, Yoshihiro Hayashi (Renesas Electronics) SDM2015-65 ICD2015-34		 A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7-x1/10) an... [more] SDM2015-65 ICD2015-34
pp.41-46
ICD, SDM 2014-08-05
13:05		 Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45		 We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] SDM2014-76 ICD2014-45
pp.77-82
SDM 2012-03-05
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) SDM2011-178		 Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated ... [more] SDM2011-178
pp.13-17
ICD 2007-04-13
13:50		 Oita   Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention
Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15		 For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by ... [more] ICD2007-15
pp.83-88
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