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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ITS, IE, ITE-AIT, ITE-HI, ITE-ME [detail] | 2011-02-21 15:10 |
Hokkaido | Hokkaido University | A note on improvement of classification performance based on SVDD including target object detection scheme Hiroshi Okada, Takahiro Ogawa, Miki Haseyama (Hokkaido Univ.)  ITS2010-43 IE2010-118 |
This paper presents a new method for improving classification performance based on the SVDD including a target object de... [more] | ITS2010-43 IE2010-118 pp.113-117 |
| SDM, CPM, ED | 2010-05-13 14:20 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA) ED2010-19 CPM2010-9 SDM2010-19 |
[more] | ED2010-19 CPM2010-9 SDM2010-19 pp.11-16 |
| SDM, CPM, ED | 2010-05-14 13:30 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Intelligent UV sensor composed of GaN-based photodiode and Si-charge transfer type signal processor ChangYong Lee, Fumiya Matsuno, Yoshinori Hashimoto, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2010-30 CPM2010-20 SDM2010-30 |
(To be available after the conference date) [more] | ED2010-30 CPM2010-20 SDM2010-30 pp.69-73 |
| SDM, CPM, ED | 2010-05-14 14:20 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32 |
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] | ED2010-32 CPM2010-22 SDM2010-32 pp.81-85 |
| SDM, ED | 2009-06-25 13:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77 |
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride ... [more] | ED2009-82 SDM2009-77 pp.141-144 |
| ED, CPM, SDM | 2009-05-15 10:55 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20 |
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] | ED2009-30 CPM2009-20 SDM2009-20 pp.65-70 |
| ED, CPM, SDM | 2009-05-15 11:20 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] | ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
| OPE, EMT, MW | 2008-07-25 10:15 |
Hokkaido | ASK and Pi/4-QPSK Dual Mode SiGe-MMIC Transceiver for 5.8GHz DSRC Terminals having Stabilized Amplifier Chain Shintaro Shinjo, Koji Tsutsumi, Kazutomi Mori, Hiroshi Okada (Mitsubishi Electric Corp.), Masahiro Inoue (Mitsubish Electric Engineering Corp.), Noriharu Suematsu (Mitsubishi Electric Corp.) MW2008-75 OPE2008-58 |
[more] | MW2008-75 OPE2008-58 pp.157-162 |
|
| CPM, ED, SDM | 2008-05-15 15:50 |
Aichi | Nagoya Institute of Technology | Investigation of deep levels in GaPN by photoconductivity transient measurement Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27 |
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] | ED2008-7 CPM2008-15 SDM2008-27 pp.29-34 |
| CPM, ED, SDM | 2008-05-15 16:15 |
Aichi | Nagoya Institute of Technology | Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy. Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) |
III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more] | |
| ED, CPM, SDM | 2006-05-19 09:25 |
Aichi | VBL, Toyohashi University of Technology | Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) |
A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices c... [more] | ED2006-30 CPM2006-17 SDM2006-30 pp.55-60 |
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