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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
15:30		 Online Online Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63		 With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] ED2020-12 CPM2020-33 LQE2020-63
pp.45-48
LQE, CPM, ED 2020-11-26
15:50		 Online Online GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64		 We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] ED2020-13 CPM2020-34 LQE2020-64
pp.49-52
LQE, CPM, ED 2020-11-27
11:20		 Online Online Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67		 Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] ED2020-16 CPM2020-37 LQE2020-67
pp.60-62
CPM, LQE, ED 2016-12-12
16:10		 Kyoto Kyoto University AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80		 We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] ED2016-64 CPM2016-97 LQE2016-80
pp.35-39
CPM, LQE, ED 2013-11-29
15:50		 Osaka   Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2013-87 CPM2013-146 LQE2013-122		 Capacitance-voltage and current-voltage characteristics have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminate... [more] ED2013-87 CPM2013-146 LQE2013-122
pp.107-112
ED 2013-08-08
16:45		 Toyama University of Toyama On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara (Univ of Fukui) ED2013-42		  [more] ED2013-42
pp.25-28
ED, LQE, CPM 2012-11-29
16:15		 Osaka Osaka City University Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104		 AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] ED2012-76 CPM2012-133 LQE2012-104
pp.45-50
ED 2012-07-26
13:30		 Fukui Fukui University Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) ED2012-41		  [more] ED2012-41
pp.1-4
ED 2012-07-26
16:15		 Fukui Fukui University Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model
Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.) ED2012-47		  [more] ED2012-47
pp.31-35
ED, MW 2012-01-12
13:40		 Tokyo Kikai-Shinko-Kaikan Bldg High temperature device characteristics of AlGaN-Channel HEMTs
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158		 We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at t... [more] ED2011-135 MW2011-158
pp.91-95
LQE, ED, CPM 2011-11-17
13:45		 Kyoto Katsura Hall，Kyoto Univ. Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102		 This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] ED2011-79 CPM2011-128 LQE2011-102
pp.29-33
ED 2010-06-17
14:50		 Ishikawa JAIST Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs
Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37		 Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] ED2010-37
pp.21-24
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