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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2007-06-07
14:45		 Hiroshima Hiroshima Univ. ( Faculty Club) Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD
Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34		 The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] SDM2007-34
pp.17-22
SDM 2007-06-08
14:15		 Hiroshima Hiroshima Univ. ( Faculty Club) Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy
Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48		 ~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack st... [more] SDM2007-48
pp.91-96
SDM 2006-06-21
13:25		 Hiroshima Faculty Club, Hiroshima Univ. Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure
Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) 		Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC ... [more] SDM2006-43
pp.7-12
SDM 2006-06-21
13:50		 Hiroshima Faculty Club, Hiroshima Univ. Characterization of Interfacial Reactions in Al2O3/SiNx/poly-Si Stack Structure by Photoemission Measurements
Hiroaki Furukawa, Masahiro Taira, Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.), Kenji Komeda, Mitsuhiro Horikawa, Kuniaki Koyama, Hideharu Miyake (Elpida Memory) 		 [more] SDM2006-44
pp.13-17
SDM 2006-06-21
16:25		 Hiroshima Faculty Club, Hiroshima Univ. Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) 		Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] SDM2006-49
pp.43-48
 Results 21 - 25 of 25 [Previous]  /   
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