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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2014-02-28
09:00		 Hokkaido Hokkaido Univ. Centennial Hall Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE -- Analysis of Nitride Quantum Well Structures --
Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157		 Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] ED2013-142 SDM2013-157
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