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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SSS 2014-12-16
15:00		 Tokyo Shibaura Institute of Technology [Invited Talk] Study on pharmaceutical Package Notation and Ease-of-Opening
Yousuke Sanbayashi, Yudai Fushimi (TMCIT), Reina Miyazaki, Fumito Tsuchiya, Dai Okamoto (Fujimori Kogyo), Fumito Tsuchiya (IUHW) SSS2014-21		 Japanese patients are increasingly opting to self-medicate and thus switching from prescription to over-the –count... [more] SSS2014-21
pp.13-16
EA, US
(Joint)		 2012-01-26
13:00		 Osaka Kansai Univ. Evaluation of Blind Speech Extraction for Speech Archiving of Poster Session
Kodai Okamoto, Ryoichi Miyazaki, Hiroshi Saruwatari, Kiyohiro Shikano (NAIST) EA2011-107		 In this report, we propose a 19-channel microphone array recording system used for blind speech extraction and diarizati... [more] EA2011-107
pp.19-24
SDM 2009-12-04
09:40		 Nara NAIST Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms
Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2009-152		 A change in the interface state density in 4H-SiC metal-oxide-semiconductor (MOS) structures by incorporation of various... [more] SDM2009-152
pp.5-10
SDM 2008-12-05
14:10		 Kyoto Kyoto University, Katsura Campus, A1-001 Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation
Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) SDM2008-190		  [more] SDM2008-190
pp.31-35
SDM 2007-12-14
16:40		 Nara Nara Institute Science and Technology Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs
Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234		 Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] SDM2007-234
pp.51-54
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