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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-28 09:00 |
Osaka | Osaka Univ. | 1.3um 25/40Gb/s EAM integrated DFB-LD Takeshi Yamatoya, Takeshi Saito, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Akihiro Shima (Mitsubishi Electric Corp.)  PN2010-40 OPE2010-153 LQE2010-138 |
[more] | PN2010-40 OPE2010-153 LQE2010-138 pp.85-88 |
| LQE | 2010-12-17 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3μm 25.8Gbps direct modulation of BH AlGaInAs DFB lasers for low driving current Go Sakaino, Toru Takiguchi, Yohei Hokama, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa, Eitaro Ishimura, Akihiro Shima (Mitsubishi Electric Corp. HOW) LQE2010-119 |
1.3µm-band BH AlGaInAs short cavity DFB lasers are fabricated with p-InP substrate for 100GbE (25Gbps x 4 waveleng... [more] | LQE2010-119 pp.23-26 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 16:00 |
Kyoto | 1.3μm-25/43Gbps EML with tensile-strained asymmetric QW absorption layer Takeshi Saito, Takeshi Yamatoya, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2009-44 OPE2009-182 LQE2009-164 |
We demonstrate 1.3µm-25 / 43Gbps EML with novel tensile-strained asymmetric quantum well absorption layer. Clear ey... [more] | PN2009-44 OPE2009-182 LQE2009-164 pp.53-56 |
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| OPE, LQE, OCS | 2009-10-23 17:20 |
Fukuoka | The development of 25Gbps pin-PD for 100Gbps Ethernet Ryota Takemura, Masaharu Nakaji, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi electric) OCS2009-81 OPE2009-147 LQE2009-106 |
We fabricated a surface-illuminated pin-PD for 100Gbps Ethernet. This pin-PD with a 15$\mu$m-diameter has a 3dB bandwidt... [more] | OCS2009-81 OPE2009-147 LQE2009-106 pp.197-200 |
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| OPE, EMT, MW | 2009-07-30 13:25 |
Hokkaido | Asahikawa Civic Culture Hall | High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which r... [more] | MW2009-35 OPE2009-35 pp.31-34 |
| OCS, LQE, OPE | 2008-10-23 09:25 |
Fukuoka | Kyushu Univ. | High-current InGaAs pin-PD for Microwave output Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60 |
For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP la... [more] | OCS2008-48 OPE2008-91 LQE2008-60 pp.7-10 |
| OPE, EMT, LQE, PN | 2007-01-29 13:50 |
Osaka | Osaka Univ. Convention Center | Waveguide photodiode for 40Gbps optical comunication Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2006-55 OPE2006-137 LQE2006-126 |
[more] | PN2006-55 OPE2006-137 LQE2006-126 pp.45-48 |
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